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Fundamental Physical Constants recommended by the National Institute of Standards and Technology (NIST) of United States, CODATA 1998.Authors: Peter J Mohr and Barry N. Taylor
[ Atomic Mass Unit mu 1.66053873(13) x 10-27 kg, Avogadro's Number NA
6.02214199(47) x 1023 mol-1, Bohr Magneton μB 9.27400899(37) x 10-24 J T-1, Bohr
Radius ao 0.5291772083(19) x 10-10 m, Boltzmann's Constant k 1.3806503(24) x
10-23 J K-1, Compton Wavelength λc 2.426310215(18) x 10-12 m, Deuteron Mass md
3.34358309(26) x 10-27 kg, Electric Constant εo 8.854187817 x 10-12 F m-1,
Electron Mass me 9.10938188(72) x 10-31 kg, Electron-Volt eV 1.602176462(63) x
10-19 J, Elementary Charge e 1.602176462(63) x 10-19 C, Faraday Constant F
9.64853415(39) x 104 C mol-1, Fine Structure Constant α 7.297352533(27) x 10-3 ,
Hartree Energy Eh 4.35974381(34) x 10-18 J, Hydrogen Ground State n/a 13.6057 eV,
Josephson Constant Kj 4.83597898(19) x 1014 Hz V-1, Magnetic Constant ľo 4p x
10-7, Molar Gas Constant R 8.314472(15) J K-1 mol-1, Natural Unit of Action
1.054571596(82) x 10-34 J s, Newtonian Constant of Gravitation G 6.673(10) x
10-11 m3 kg-1 s-2, Neutron Mass mn 1.67492716(13) x 10-27 kg, Nuclear Magneton
μn 5.05078317(20) x 10-27 J T-1, Planck Constant h 6.62606876(52) x 10-34 J s,
Planck Length lp 1.6160(12) x 10-35 m, Planck Mass mp 2.1767(16) x 10-8 kg,
Planck Time tp 5.3906(40) x 10-44 s, Proton Mass mP 1.67262158(13) x 10-27 kg,
Rydberg Constant RH 10 9.73731568549(83) x 105 m-1, Stefan Boltzmann Constant σ
5.670400(40) x 10-8 W m-2 K-4 , Speed of Light in Vacuum c 2.99792458 x 108 m
s-1, Thompson Cross Section σe 0.665245854(15) x 10-28 m2, Wien Displacement Law
Constant b 2.8977686(51) x 10-3 m K] / HTE Labs provides process specialties wafer foundry, thin film vacuum deposition
services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry,
R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers
from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V
bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes.
R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial
process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb),
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and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including
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