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46 Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776)
Editor(s): O.D.Velev, T.J.Bunning, Y.Xia, P.Yang
Conference: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA
Conference Date: 21-25 April 2003
Publisher: Mater. Res. Soc, USA, 2003
Language: English
ISBN: 1 55899 713 X
Document type: Conference proceedings
Abstract: The following topics are dealt with: quantum dots; nanoparticles; one-dimensional nanostructures; molecular systems; patterning; colloidal self-assembly; other nanostructured materials, their properties and applications
Inspec No.: 8253419
47 Electron spin filtering in all-semiconductor tunneling structures
Author(s): Leo Yu, H.C. Huang, O. Voskoboynikov (Affiliation: Nat. Chiao Tung Univ., Hsinchu, Taiwan)
Conference: Sixth International Conference on New Phenomena in Mesoscopic Structures & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, USA
Conference Date: 1-5 Dec. 2003
Journal: Superlattices Microstruct. (UK), vol.34, no.3-6, p.547- 52 (Sept.-Dec. 2003)
Publisher: Academic Press, UK
Language: English
ISSN: 0749-6036, Full text
Document type: Conference paper in journal
Abstract: In this work we briefly review the present day perspectives for exploiting conventional nonmagnetic semiconductor nanotechnology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III-V semiconductors with strong Rashba spin-orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration (25 refs.)
Inspec No.: 8249793
48 A Si nano-micro-wire array on a Si(111) substrate and field emission device applications
Author(s): M. Ishida, T. Kawano, M. Futagawa, Y. Arai, H. Takao, K. Sawada (Affiliation: Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan)
Conference: Sixth International Conference on New Phenomena in Mesoscopic Structures & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, USA
Conference Date: 1-5 Dec. 2003
Journal: Superlattices Microstruct. (UK), vol.34, no.3-6, p.567-75 (Sept.-Dec. 2003)
Publisher: Academic Press, UK
Language: English
ISSN: 0749-6036, Full text
Document type: Conference paper in journal
Abstract: A large number of Si wires on Si(111) can be fabricated selectively by the vapor-liquid-solid growth method with a high aspect ratio greater than 100. The diameter of the wire can be controlled from less than a micron to a few hundred microns. We propose a novel smart field electron emission device using silicon nano-wires fabricated by this vapor-liquid-solid growth method, and demonstrate field electron emission with a quite low operation voltage from a gated silicon nano-wire. The threshold voltage is about 13 V, and the value is similar to those for gated carbon- nanotube field emitters. The emission current reaches 10 nA at 15V gate voltage (11 refs.)
Inspec No.: 8249794
49 Heterostructures incorporated in one-dimensional semiconductor materials and devices
Author(s): C. Thelander, M.T. Bjork, A.I. Persson, B.J. Ohlsson, T. Sass (Affiliation: Solid States Phys., Lund Univ., Sweden), L.R. Wallenberg, L. Samuleson
Editor(s): A.R.Long, J.H.Davies
Conference: 26th International Conference on the Physics of Semiconductors, Edinburgh, UK
Conference Date: 29 July-2 Aug. 2002
Sponsor(s): Int. Union of Pure and Appl. Phys. (IUPAP); European Commission; Inst. of Phys., Electron Microscopy and Anal. Group, Quantum Electron. and Photonics Group, Semiconductor Phys. Group, Theory of Condensed Matter Group, Thin Films and Surfaces Group; Inst. of Phys. Publishing Ltd.; Filtronic; Nat. Microelectronics Inst.; Nature Publications; Toshiba Res. Europe Ltd.; United Kingdom Eng. and Physical Sci. Res. Council (EPSRC); United States Navy, Office of Naval Res., Int. Field Office
Publication: 26th International Conference on the Physics of Semiconductors (Inst. of Phys. Conference Series Vol.171)
Publisher: Inst. of Phys. Publishing Ltd, UK, 2003
Language: English
ISBN: 0 7503 0924 5 Page: 253-60
Document type: Conference paper
Abstract: As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquidsolid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot (18 refs.)
Inspec No.: 8253349
50 Growth and optical properties of GaP, GaP@GaN and GaN@GaP core-shell nanowires
Author(s): Hung-Min Lin, Jian Yang (Affiliation: Dept. of Chem., Nat. Taiwan Normal Univ., Taipei, Taiwan), Yong-Lin Chen, Yau-Chung Liu, Kai-Min Yin, Ji-Jung Kai, Fu-Rong Chen, Li-Chyong Chen, Yang-Fang Chen, Chia-Chun Chen
Editor(s): O.D.Velev, T.J.Bunning, Y.Xia, P.Yang
Conference: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA
Conference Date: 21-25 April 2003
Publication: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776)
Publisher: Mater. Res. Soc, USA, 2003
Language: English
ISBN: 1 55899 713 X Page: 23-30
Document type: Conference paper
Abstract: High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth, directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed (21 refs.)
Inspec No.: 8253423
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