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58 Toward elimination of solvents in micro/nanofabrication: solventless polymerization and its applications
Author(s): Hongwei Gu, Degang Fu, Chenjie Xu, Jun Tang, Jie Xie, Bing Xu (Affiliation: Dept. of Chem., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, China)
Editor(s): O.D.Velev, T.J.Bunning, Y.Xia, P.Yang
Conference: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA
Conference Date: 21-25 April 2003
Publication: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776)
Publisher: Mater. Res. Soc, USA, 2003
Language: English
ISBN: 1 55899 713 X Page: 177-85
Document type: Conference paper
Abstract: Here we report a solventless polymerization process, which involves adding catalysts on the surface of a solid substrate and polymerizing volatile monomers at the gas/solid interface. It provides an alternative to other thin-film-making processes and may lead to reduce or eliminate the use of solvents in micro/nanofabrication. On silicon or silicon dioxide substrates, solventless produced thin films show improved smoothness inside microchannels, and suits reactive ion etching (RlE) process. In addition, this process offers a simple route to generate microstructures that are inaccessible in the presence of solvent, and provides a simple and fast protocol to screen catalysts in a parallel mode (11 refs.)
Inspec No.: 8253446
59 Electric field induced carbon nanostructures for electronics and high surface area applications
Author(s): Chao Hsun Lin, Shu Hsing Lee (Affiliation: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan), Chih Ming Hsu, Ming Her Tsai, Cheng Tzu Kuo
Editor(s): O.D.Velev, T.J.Bunning, Y.Xia, P.Yang
Conference: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA
Conference Date: 21-25 April 2003
Publication: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776)
Publisher: Mater. Res. Soc, USA, 2003
Language: English
ISBN: 1 55899 713 X Page: 219-24
Document type: Conference paper
Abstract: Strong influence of the applied or self-induced (i.e. self-biasing) electric field on the alignment, orientation and structures was found in the carbon nano-structure deposition process. This study applied microwave-plasma electroncyclotron resonance CVD (ECR-CVD) technique for carbon nano-structure deposition. The deposited structures and properties were characterized with SEM and field emission I-V measurements. The result shows that a negative dc bias applied on the substrate is a necessary condition. In this condition, all carbon nanostructures were well aligned and perpendicular to the substrate surfaces and independent to the plasma/gas flowing directions. Interestingly, when applied an additional electric field near the substrate surface by a guiding metal plate, the CNT growth direction could be manipulated from perpendicular to nearly parallel to the substrate surface. Moreover, a rattan-like CNT would form when prolonging the deposition time or increasing the plasma carbon concentration. These novel nanostructures are expected to have high potential in energy storage, field emission display, nanoelectronics and gas sensing applications accordingly (19 refs.)
Inspec No.: 8253451
60 Synthesis and electronic properties of singlecrystalline indium nitride nanowires
Author(s): Tao Tang, Song Han, Wu Jin, Xiaolei Liu, Chao Li, Daihua Zhang, Chongwu Zhou (Affiliation: Dept. of Electr. Eng., Electrophys., Southern Carolina Univ., Los Angeles, CA, USA)
Editor(s): O.D.Velev, T.J.Bunning, Y.Xia, P.Yang
Conference: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA
Conference Date: 21-25 April 2003
Publication: Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage
and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776)
Publisher: Mater. Res. Soc, USA, 2003
Language: English
ISBN: 1 55899 713 X Page: 265-70
Document type: Conference paper
Abstract: InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was employed to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality products and growth rates as high as 4-10 ìm/hour. The as-grown nanowires showed highly single-crystalline structures and precisely controlled diameters by using monodispersed gold clusters as the catalyst. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism (10 refs.)
Inspec No.: 8253459
61 Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing
Author(s): A. Markwitz, S. Johnson (Affiliation: Rafter Res. Centre, Inst. of Geol. & Nucl. Sci., Lower Hutt, New Zealand), M. Rudolphi, H. Baumann, A. Mucklich
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.13108-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: SiC-surface nanostructures on silicon were produced by 10 keV carbon ion implantation into silicon followed by annealing to 1000°C for 15 s under high-vacuum conditions using a raster-scanned electron beam. Following implantation, an amorphous layer is produced which starts at the surface and extends 65 nm into the substrate. Following annealing, the implanted surface layer remains amorphous but becomes covered with semi-spherical crystalline features up to 300 nm in diameter. The nanocrystals have been confirmed to be SiC which, following nucleation, grow as a result of C and Si diffusion across the oxide free substrate surface during annealing (15 refs.)
Inspec No.: 8247126
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