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72 Size controlling of the nanoscale silicon particles in a-Si:H films by RTA
Author(s): Xue Qing, Li Guan-cheng, Wang Bing-kun (Affiliation: Dept. of Math. Phys. Sci., Huaihai Inst. of Technol., Lianyungang, China)
Journal: Semicond. Technol. (China), vol.29, no.10, p.20-6 (2004)
Publisher: Editorial Board of Semicond. Technol, China
Language: Chinese
ISSN: 1003-353X
Document type: Journal article
Abstract: A new method for controlling the size of nanoscale silicon grown by rapid thermal annealing (RTA) on hydrogenated amorphous silicon(a-Si:H) films is reported. The effect of the temperature on the formed silicon particles is discussed (2 refs.)
Inspec No.: 8252021
73 Copper diffusion in ZnS thin films
Author(s): E. Bacaksiz (Affiliation: Dept. of Phys., Karadeniz Tech. Univ., Trabzon, Turkey), T.D. Dzhafarov, V.D. Novruzov, K. Ozturk, M. Tomakin, T. Kucukomeroglu, M. Altunbas, E. Yanmaz, B. Abay
Journal: Phys. Status Solidi A (Germany), vol.201, no.13, p.2948-52 (Oct. 2004)
Publisher: Wiley-VCH, Germany
Language: English
ISSN: 0031-8965, Full text
Document type: Journal article
Abstract: Diffusion of Cu in ZnS thin films was investigated in the temperature range 80-400°C using the energy-dispersive X-ray fluorescence (EDXRF) technique. ZnS thin films were deposited by spray pyrolysis on a glass substrate. The temperature dependence of the Cu diffusion coefficient is described by the equation D=1.4×10-10 exp [-(0.18 eV)/kT]. It is shown that diffusion doping of n-type ZnS by Cu is accompanied by a significant increase in resistivity and a slight decrease in the band gap of the ZnS films. The observed results are attributed to the migration of Cu in polycrystalline ZnS films by means of diffusion both along grain boundaries and into grains (18 refs.)
Inspec No.: 8252639
74 Studies of co-implanted helium and hydrogen with an intermediate annealing step for thermal splitting of bonded silicon to oxide-coated wafers
Author(s): R.E. Hurley, S. Suder, H.S. Gamble (Affiliation: Sch. of Electr. & Electron. Eng., Queen's Univ., Belfast, UK)
Journal: Vacuum (UK), vol.76, no.2-3, p.291-7 (5 Nov. 2004)
Publisher: Elsevier, UK
Language: English
ISSN: 0042-207X, Full text
Document type: Journal article
Abstract: Layer transfer by thermal or mechanical splitting of implanted silicon wafers can often require processing at elevated temperatures before bonding and annealing. The possibility has been investigated here of making two implants, the first defining a damage plane for splitting, the second being made after high-temperature processing. Helium and hydrogen implanted wafers were annealed at various temperatures, Ta , this being followed by a second implantation of either gas. Thermal splitting of bonded wafer pairs was studied for both implants to the same projected range, Rp, and with hydrogen implanted to Rp=25% less than helium. In the former case, complete thermal splitting occurred for Tales550°C; for Ta>550°C, wafers failed to split or delaminated at the bond interface. When hydrogen was implanted to a shallower depth complete thermal splitting occurred for Tales500°C. The split occurred at the hydrogen Rp for Ta<400°C and at the helium Rp for Ta =or>400°C. Above Ta=500°C a decreasing percentage of the total silicon area was transferred. At 400°C measurements suggested that splitting occurred at both helium and hydrogen Rp planes and it is believed that helium platelet formation at this temperature is an important factor. For Ta<400°C, helium, a proportion of which may have diffused towards the peak of the hydrogen distribution, is believed to react and produce splitting there during bond-annealing. For Ta >400°C, sufficient hydrogen is thought to diffuse during bond-annealing towards the peak of the helium distribution and react there to produce the weakest splitting plane. For Ta>500°C, loss of helium, annealing out of strain and break-up of platelets into bubble-cavities reduces the probability of thermal splitting. When hydrogen was implanted first, complete thermal splitting occurred for Tales300°C but was inconsistent at 400°C and above (20 refs.)
Inspec No.: 8253287
75 Defects induced by hydrogen implantation in n-Si/SiO2 structures
Author(s): S. Simeonov, A. Gushterov, A. Szekeres, E. Kafedjiiska (Affiliation: Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria)
Journal: Vacuum (UK), vol.76, no.2-3, p.303-6 (5 Nov. 2004)
Publisher: Elsevier, UK
Language: English
ISSN: 0042-207X, Full text
Document type: Journal article
Abstract: Capacitance-voltage measurements at 77 and 300 K have shown that 11 keV hydrogen ion implantation of n-Si/SiO2 structure generates defects in the SiO2 film and at the Si/SiO2 interface. Deep-level transient spectroscopy spectra reveal the creation of deep levels in the Si substrate. In the accumulation mode tunnelling type conduction through the 120 nm thick SiO2film is observed (7 refs.)
Inspec No.: 8253289
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