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81 Effects of wavelength and doping concentration on silicon damage threshold
Author(s): Hsiao-hua Liu, G. Mourou (Affiliation: Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA), Y.N. Picard, S.M. Yalisove, T. Juhasz Editor(s): A.A.Sawchuk
Conference: Conference on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA
Conference Date: 16-21 May 2004
Sponsor(s): APS; IEEE; Opt. Soc. of America
Publication: Conference on Lasers and Electro-Optics (CLEO)
Publisher: IEEE, USA, 2004
Language: English Page: 2 pp. vol.2
Document type: Conference paper
Abstract: Our damage experiment shows threshold fluence does not decrease with increasing doping concentration and its dependence on wavelength is weak, with photon energies above or below bandgap. Our results indicate impact ionization is the dominating mechanism
Inspec No.: 8254847
82 Three-dimensional macroporous silicon photonic crystal with large photonic band gap
Author(s): J. Schilling, J. White, A. Scherer (Affiliation: California Inst. of Technol., Pasadena, CA, USA), G. Stupian, R. Hillebrand, U. Gosele
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.11101-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: Three-dimensional photonic crystals based on macroporous silicon are fabricated by photoelectrochemical etching and subsequent focused-ion-beam drilling. Reflection measurements show a high reflection in the range of the stopgap and indicate the spectral position of the complete photonic band gap. The onset of diffraction which might influence the measurement is discussed (17 refs.)
Inspec No.: 8247044
83 Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers
Author(s): C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao (Affiliation: Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan), Kao-Feng Liao, C.W. Liu
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.11909-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: SiGe-on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. The relaxation process of the compressively strained SiGe films bonded to SiO2 layers through the rapid thermal oxidation was investigated. Buckling nucleus were randomly located at the beginning of oxidation and the buckling undulation was well developed after 30 s oxidation at 960°C. The buckling amplitude increases with the increasing thermal oxidation time. An emission peak at 1.5 ìm was observed in the low temperature photoluminescence of the buckled SiGe layers (14 refs.)
Inspec No.: 8247072
84 Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
Author(s): A. Balocchi, A. Curran, T.C.M. Graham, C. Bradford, K.A. Prior, R.J. Warburton (Affiliation: Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK)
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.11915-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: Epitaxial liftoff is a post-growth process by which the active part of a semiconductor heterostructure, the epitaxial layer, is removed from its original substrate and deposited onto a new substrate. This is a well established technique in GaAs-based heterostructures where epitaxial liftoff can be achieved by exploiting the contrast in the etch rates of GaAs and AlAs in hydrofluoric acid. We report here successful epitaxial liftoff of a ZnSe-based heterostructure. We find that a metastable layer of MgS acts as a perfect release layer based on the huge contrast in the etch rates of ZnSe and MgS in hydrochloric acid. Epitaxial liftoff of millimeter-sized ZnSe samples takes a fraction of the time required for GaAs liftoff. Photoluminescence experiments confirm that the liftoff layer has the same optical characteristics as the original wafer material (19 refs.)
Inspec No.: 8247078
85 High-Q whispering-gallery modes in GaAs/AlOx microdisks
Author(s): E. Peter, I. Sagnes, G. Guirleo, S. Varoutsis, J. Bloch, A. Lemaitre, P. Senellart (Affiliation: CNRS-Lab. de Photonique et Nanostructures, Marcoussis, France)
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21103-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: We report on the fabrication of microdisks on an AlOx pedestal. We develop a process using electron beam lithography, a chemical etching, and selective oxidation. InAs self-assembled quantum dots are used as a broad band source to probe the optical modes of the microdisks. With this process, we observe whispering-gallery modes, with quality factors as large as 12 500 for 2-ìm-diam microdisks (18 refs.)
Inspec No.: 8247149
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