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94 Indentation behavior of silicon wafer etched by KOH
Author(s): Fuqian Yang, Peixing Fei (Affiliation: Dept. of Chem. & Mater. Eng., Univ. of Kentucky, Lexington, KY, USA)
Journal: Electrochem. Solid-State Lett. (USA), vol.8, no.2, p. G51-3 (Feb. 2005)
Publisher: Electrochem. Soc, USA
Language: English
ISSN: 1099-0062, Full text
Document type: Journal article
Abstract: Using microindentation technique, the indentation behavior of silicon wafers etched by a KOH water system was investigated. Surface-degradation in the etched Si wafers was observed, which was due to the formation of etch-pits. Indentation-induced radial crack was used to evaluate the indentation-fracture toughness. The indentation-fracture toughness for the etched Si wafers was found to be less than the polished silicon wafers, in agreement with the etchinginduced surface degradation. Such surface degradation in the etched Si wafers makes it possible to remove surface defects and smooth the surface of Si wafers by using KOH water system (19 refs.)
Inspec No.: 8249236
95 Hydrogenation effect on the Er luminescence in amorphous silicon quantum dot films
Author(s): Nae-Man Park, Tae-Youb Kim, Kyung-Hyun Kim, Gun Yong Sung (Affiliation: Future Technol. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea), Kwan Sik Cho, J.H. Shin, Baek-Hyun Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi
Journal: Electrochem. Solid-State Lett. (USA), vol.8, no.2, p. G63-4 (Feb. 2005)
Publisher: Electrochem. Soc, USA
Language: English
ISSN: 1099-0062, Full text
Document type: Journal article
Abstract: The hydrogenation effect on the Er luminescence at 1.54 µm in an Er-doped amorphous Si quantum dot film was investigated. After hydrogenation, the luminescent properties were different between large-dot (2.5 nm) and small-dot (1.4 nm) samples. In particular, the number of optically active Er ions was increased in a large-dot sample, but decreased in a small-dot sample. We propose that the hydrogenation causes the Er migration toward an Si dot, and the luminescent property depending on the dot size is originated from the number of Er ions near an Si dot before hydrogenation (10 refs.)
Inspec No.: 8249240
96 A model to study the effect of selective anodic oxidation on ultrathin gate oxides
Author(s): V.G. Marathe, R. Paily, A. DasGupta, N. DasGupta (Affiliation: Dept. of Electr. Eng., Indian Inst. of Technol., Chennai, India)
Journal: IEEE Trans. Electron Devices (USA), vol.52, no.1, p.118-21 (Jan. 2005)
Publisher: IEEE, USA
Language: English
ISSN: 0018-9383, Full text
Document type: Journal article
Abstract: In this paper, we have studied the effect of selective anodic oxidation on ultrathin (22-31 â) silicon dioxide grown at different temperatures ranging from 600°C to 875°C, on both p- and n-type substrates. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation (10 refs.)
Inspec No.: 8249852
97 Flat, cheap, and under control [electrochemical mechanical planarization]
Author(s): A.S. Brown
Journal: IEEE Spectr. (USA), vol.42, no.1, p.40-5 (Jan. 2005)
Publisher: IEEE, USA
Language: English
ISSN: 0018-9235, Full text
Document type: Journal article
Abstract: This paper describes Applied Material's wafer polishing technology, called electrochemical mechanical planarization (ECMP). ECMP is the answer to the problems of electropolishing and chemical mechanical planarization (CMP) of the chip-making process: manufacturing faster, more powerful chips without obliterating their vanishing fine and increasingly fragile features. It is designed to remove excess copper from the top of a newly formed layer of wiring on a chip without damaging the fragile insulation material, called a dielectric, beneath it. ECMP combines aspects of two other technologies, chemical mechanical planarization (CMP) and electropolishing
Inspec No.: 8249882
98 Adsorption of triplet O2 on Si(100): the crucial step in the initial oxidation of a silicon surface
Author(s): X.L. Fan, Y.F. Zhang (Affiliation: Dept. of Chem., Chinese Univ. of Hong Kong, China), W.M. Lau, Z.F. Liu
Journal: Phys. Rev. Lett. (USA), vol.94, no.1, p.016101/1-4 (14 Jan. 2005)
Publisher: APS, USA
Language: English
ISSN: 0031-9007, Full text
Document type: Journal article
Abstract: It has long been understood that a precursor mediated chemisorption is a significant part of the dynamics for the adsorption of O2 on Si(100), which is a much studied model system of surface reaction with considerable technological relevance. However, theoretical studies on the interaction between O2 and Si(100) have been focused on the excited singlet state of O2 and unable to explain the observations in surface scattering experiments. We demonstrate by first principles calculations that such a focus is misplaced. In reality, triplet O2 can also react with Si(100), after overcoming small barriers, and its reaction paths provide a full account for experiments. Our results highlight the important role played by triplet O2 in surface oxidation (27 refs.)
Inspec No.: 8252414
99 Raman scattering and photoluminescence studies on O+ implanted porous silicon
Author(s): R. Prabakaran (Affiliation: Dept. of Phys., Loyola Coll., Chennai, India), R. Kesavamoorthy, S. Amirthapandian, A. Ramanand
Journal: Mater. Lett. (Netherlands), vol.58, no.29, p.3745-50 (Nov. 2004)
Publisher: Elsevier, Netherlands
Language: English
ISSN: 0167-577X, Full text
Document type: Journal article
Abstract: The effects of 125 keV O+ implantation on porous silicon (PS) in the fluence range from 1014 to 1016 cm-2 have been investigated using Raman scattering and photoluminescence techniques. PS has been prepared by anodically etching (100) cut n-type crystalline silicon (c-Si). Raman spectra of PS have been generated using a model of phonon confinement in Si nanocrystallites and compared with experiment. As the fluence increases, the Si nanocrystallite size estimated from the Raman spectra decreases. Unimplanted PS shows a visible photoluminescence (PL) peak at 2.02 eV, with 0.3 eV FWHM coming from electron confinement in Si nanocrystallites. Its intensity decreases due to the creation of non-radiative recombination centers and the peak position increases due to nanocrystallites size reduction with increase of fluence. On O+ implantation, PS shows an additional visible PL at 2.35 eV with 0.3 eV FWHM due to amorphous silicon (a-Si) nanozones created by O+ single ion impact. Evidence for this PL peak is provided from O + implanted c-Si. 2.35 eV PL intensity in O+ implanted PS is 10 times higher than that in O+ implanted c-Si (16 refs.)
Inspec No.: 8247631
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