HTE Labs - 109 Large scale high precision nano-oxidation using an atomic force microscope 110 Real-time monitoring of oxidation processes on Si(001) surface using O2 gas under 1000 K by synchrotron radiation photoemission spectroscopy 111 Surface modification of Cl-adsorbed Si(111)-7×7 by the irradiation of infrared pulsed laser 112 Etching process analysis based on etchant flow for high-density build-up substrate

109 Large scale high precision nano-oxidation using an atomic force microscope Author(s): H. Kuramochi, K. Ando, T. Tokizaki, M. Yasutake, F. Perez-Murano, J.A. Dagata, H. Yokoyama (Affiliation: Res. Consortium for Synthetic Nano-Function Mater. Project, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.1, p.343-8 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: Scanning probe microscope nano-oxidation iscarried out on H-passivated Si(001) surfaces using a humiditycontrol atomic force microscope (AFM) in contact and dynamicmodes. To achieve high precision nano-oxidation at largescale, the original tube-scanner-based AFM unit is modified:horizontal movement of the whole sample block (sample stageand the scanner) is operated by an additional XY piezo stage,whilst its vertical movement is controlled by a piezo tubescanner.The high linearity of the horizontal movement isdemonstrated by high resolution oxide patterns which arefabricated after the instrumental modification using standardAFM cantilevers and a modified AFM cantilever with an addedcarbon nano-tube on tip (13 refs.) Inspec No.: 8253003 110 Real-time monitoring of oxidation processes on Si(001) surface using O2 gas under 1000 K by synchrotron radiation photoemission spectroscopy Author(s): A. Yoshigoe, K. Moritani, Y. Teraoka (Affiliation: Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan) Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.2, p.1124-9 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: The thermal oxidation of Si(001) surface under 1000K in the O2 pressure of 1×10-4 Pa has been in situinvestigated using real-time photoemission spectroscopy withhigh energy-resolution synchrotron radiation. Using a reactionkinetics model, we found that the oxidation at 1000 Kprogressed with a two dimensional island growth mechanisminvolving desorption of SiO molecules. Si2+ species relating tothe backbond oxidation at the topmost Si dimers appeared inconjunction with Si1+ species at the initial oxidation stage at1000 K. We clarified that the topmost Si atoms bonding to twooxygen atoms played an important role as an initial adsorbate.Since Si oxidation states with higher oxidation numbers, suchas Si4+ and Si3+, appeared at the early oxidation stages aswell, we concluded that SiO2 adsorbates constructed with theSi4+ species were preferentially formed even in the oxidenucleus as well as the two dimensional islands on the Si(001)surface at 1000 K (27 refs.) Inspec No.: 8253066 111 Surface modification of Cl-adsorbed Si(111)-7×7 by the irradiation of infrared pulsed laser Author(s): T. Kirimura, T. Shirao, K. Shudo (Affiliation: Dept. of Phys., Yokohama Nat. Univ., Japan), Y. Tanaka, T. Ishikawa, M. Tanaka Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.2, p.1137-42 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: As the first step to modify a semiconductor surfacewith light, we have studied the effect of infrared (IR) pulsedlaser irradiation on Cl-saturated Si(111)-7×7 surface. After thesurface was irradiated by a femto-second IR pulsed laser, wemeasured temperature programmed desorption (TPD) toobserve the change of surface chemical component. Thermaldesorption of SiCl2 molecules was reduced and that of SiCl4molecules was enhanced by the IR irradiation. This result canbe interpreted that polychloride radicals made of siliconadatoms are removed from the rest atom and form siliconpolychloride clusters on the surface. The change was found tooccur in the time scale less than 1 s, so that it may be via anelectronic excitation process. Desorption of chlorides underthe IR irradiation was detected at room temperature, but notdetected at low temperature (150 K). The desorption at roomtemperature increased during the first 60 s of the IRirradiation, which implies that the desorption is due to atemperature rise of the substrate. It is concluded that the IRirradiation effect on the surface is classified into two processesdominated by the electronic excitation and the thermal effect(15 refs.) Inspec No.: 8253068 112 Etching process analysis based on etchant flow for high-density build-up substrate Author(s): H. Noma, T. Nakanishi (Affiliation: IBM Japan, Ltd.,Shiga, Japan ) Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004)(IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 289-93 Document type: Conference paper Abstract: A technique to predict the minimum line and spacewidth of copper wiring on printed circuit boards is developed.Effects of the variations of copper thickness, resist width, andetching speed are taken into account as well as effects ofcopper thickness, anchor depth, and resist thickness. Todevelop the technique, dry film resists were evaluated withhardware experiments and theoretical calculations. From theexperiments, the minimum pitch of lines are 80 ìm (copperthickness 20 ìm, anchor depth 2.8 ìm, resist thickness 15ìm). With the process variation of the experiments, thecalculation results for the minimum pitch of lines are 75 ìm,which is almost the same as the experimental results. Theminimum pitches of the lines formed by the subtractivemethod were obtained from theoretical calculations under theconditions that the copper thickness ranges from 8 ìm to 20ìm and the anchor depth is 2.8 ìm in order to estimate thedependence of the minimum pitch of the lines on copperthickness and variations of the processes (6 refs.) Inspec No.: 8256066

	Semiconductor Devices - Miscellaneous articles, abstracts, technical notes, letters, publications
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109 Large scale high precision nano-oxidation using an atomic force microscope Author(s): H. Kuramochi, K. Ando, T. Tokizaki, M. Yasutake, F. Perez-Murano, J.A. Dagata, H. Yokoyama (Affiliation: Res. Consortium for Synthetic Nano-Function Mater. Project, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.1, p.343-8 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: Scanning probe microscope nano-oxidation iscarried out on H-passivated Si(001) surfaces using a humiditycontrol atomic force microscope (AFM) in contact and dynamicmodes. To achieve high precision nano-oxidation at largescale, the original tube-scanner-based AFM unit is modified:horizontal movement of the whole sample block (sample stageand the scanner) is operated by an additional XY piezo stage,whilst its vertical movement is controlled by a piezo tubescanner.The high linearity of the horizontal movement isdemonstrated by high resolution oxide patterns which arefabricated after the instrumental modification using standardAFM cantilevers and a modified AFM cantilever with an addedcarbon nano-tube on tip (13 refs.) Inspec No.: 8253003	110 Real-time monitoring of oxidation processes on Si(001) surface using O2 gas under 1000 K by synchrotron radiation photoemission spectroscopy Author(s): A. Yoshigoe, K. Moritani, Y. Teraoka (Affiliation: Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan) Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.2, p.1124-9 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: The thermal oxidation of Si(001) surface under 1000K in the O2 pressure of 1×10-4 Pa has been in situinvestigated using real-time photoemission spectroscopy withhigh energy-resolution synchrotron radiation. Using a reactionkinetics model, we found that the oxidation at 1000 Kprogressed with a two dimensional island growth mechanisminvolving desorption of SiO molecules. Si2+ species relating tothe backbond oxidation at the topmost Si dimers appeared inconjunction with Si1+ species at the initial oxidation stage at1000 K. We clarified that the topmost Si atoms bonding to twooxygen atoms played an important role as an initial adsorbate.Since Si oxidation states with higher oxidation numbers, suchas Si4+ and Si3+, appeared at the early oxidation stages aswell, we concluded that SiO2 adsorbates constructed with theSi4+ species were preferentially formed even in the oxidenucleus as well as the two dimensional islands on the Si(001)surface at 1000 K (27 refs.) Inspec No.: 8253066
111 Surface modification of Cl-adsorbed Si(111)-7×7 by the irradiation of infrared pulsed laser Author(s): T. Kirimura, T. Shirao, K. Shudo (Affiliation: Dept. of Phys., Yokohama Nat. Univ., Japan), Y. Tanaka, T. Ishikawa, M. Tanaka Conference: 22nd European Conference on Surface Science, Prague, Czech Republic Conference Date: 7-12 Sept. 2003 Journal: Surf. Sci. (Netherlands), vol.566-568, pt.2, p.1137-42 (20 Sept. 2004) Publisher: Elsevier, Netherlands Language: English ISSN: 0039-6028, Full text Document type: Conference paper in journal Abstract: As the first step to modify a semiconductor surfacewith light, we have studied the effect of infrared (IR) pulsedlaser irradiation on Cl-saturated Si(111)-7×7 surface. After thesurface was irradiated by a femto-second IR pulsed laser, wemeasured temperature programmed desorption (TPD) toobserve the change of surface chemical component. Thermaldesorption of SiCl2 molecules was reduced and that of SiCl4molecules was enhanced by the IR irradiation. This result canbe interpreted that polychloride radicals made of siliconadatoms are removed from the rest atom and form siliconpolychloride clusters on the surface. The change was found tooccur in the time scale less than 1 s, so that it may be via anelectronic excitation process. Desorption of chlorides underthe IR irradiation was detected at room temperature, but notdetected at low temperature (150 K). The desorption at roomtemperature increased during the first 60 s of the IRirradiation, which implies that the desorption is due to atemperature rise of the substrate. It is concluded that the IRirradiation effect on the surface is classified into two processesdominated by the electronic excitation and the thermal effect(15 refs.) Inspec No.: 8253068	112 Etching process analysis based on etchant flow for high-density build-up substrate Author(s): H. Noma, T. Nakanishi (Affiliation: IBM Japan, Ltd.,Shiga, Japan ) Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004)(IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 289-93 Document type: Conference paper Abstract: A technique to predict the minimum line and spacewidth of copper wiring on printed circuit boards is developed.Effects of the variations of copper thickness, resist width, andetching speed are taken into account as well as effects ofcopper thickness, anchor depth, and resist thickness. Todevelop the technique, dry film resists were evaluated withhardware experiments and theoretical calculations. From theexperiments, the minimum pitch of lines are 80 ìm (copperthickness 20 ìm, anchor depth 2.8 ìm, resist thickness 15ìm). With the process variation of the experiments, thecalculation results for the minimum pitch of lines are 75 ìm,which is almost the same as the experimental results. Theminimum pitches of the lines formed by the subtractivemethod were obtained from theoretical calculations under theconditions that the copper thickness ranges from 8 ìm to 20ìm and the anchor depth is 2.8 ìm in order to estimate thedependence of the minimum pitch of the lines on copperthickness and variations of the processes (6 refs.) Inspec No.: 8256066

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