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150 InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz fô and 505-GHz fmax
Author(s): Z. Griffith, M. Dahlstrom, M.J.W. Rodwell (Affiliation: Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA), X.-M. Fang, D. Lubyshev, Y. Wu, J. M. Fastenau, W.K. Liu
Journal: IEEE Electron Device Lett. (USA), vol.26, no.1, p.11-13 (Jan. 2005)
Publisher: IEEE, USA
Language: English
ISSN: 0741-3106, Full text
Document type: Journal article
Abstract: InP-In0.53Ga0.47As-InP double heterojunction bipolartransistors (DHBT) have been designed for use in highbandwidth digital and analog circuits, and fabricated using aconventional mesa structure. These devices exhibit amaximum 391-GHz fô and 505-GHz fmax, which is the highestfô reported for an InP DHBT-as well as the highestsimultaneous fô and fmax for any mesa HBT. The devices havebeen aggressively scaled laterally for reduced base-collectorcapacitance Ccb. In addition, the base sheet resistance ñsalong with the base and emitter contact resistivities ñc havebeen lowered. The dc current gain â is ¡Ö36 and VBR,CEO=5.1V. The devices reported here employ a 30-nm highly dopedInGaAs base, and a 150-nm collector containing an InGaAs-InAlAs superlattice grade at the base-collector junction. Fromthis device design we also report a 142-GHz static frequencydivider (a digital figure of merit for a device technology)fabricated on the same wafer. The divider operation is fullystatic, operating from fclk=3 to 142.0 GHz while dissipating¡Ö800 mW of power in the circuit core. The circuit employssingle-buffered emitter coupled logic (ECL) and inductivepeaking. A microstrip wiring environment is employed for highinterconnect density, and to minimize loss and impedancemismatch at frequencies >100 GHz (12 refs.)
Inspec No.: 8250016
151 An abrupt InP-GaInAs-InP DHBT
Author(s): D.C. Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, D. Ritter (Affiliation: Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel)
Journal: IEEE Electron Device Lett. (USA), vol.26, no.1, p.14-16 (Jan. 2005)
Publisher: IEEE, USA
Language: English
ISSN: 0741-3106, Full text
Document type: Journal article
Abstract: We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with athin heavily doped n-type InP layer at the base-collectorinterface. The energy barrier between the base and thecollector was fully eliminated by a 4-nm-thick silicon dopedlayer with ND=3×1019 cm-3 . The obtained fT and fMAX valuesat a current density of 1 mA/ìm2 are comparable to the valuesreported for DHBTs with a grade layer between the base andthe collector (8 refs.)
Inspec No.: 8250017
152 Design of Si/SiGe HBTs based on SOS/SOI substrates
Author(s): Shi Chen, Chen Jian-Xin, Yang Wei-Ming (Affiliation: Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., China)
Journal: Microelectron. (China), vol.34, no.4, p.421-4 (Aug. 2004)
Publisher: Editorial Dept. Microelectronics, China
Language: Chinese
ISSN: 1004-3365
Document type: Journal article
Abstract: Deterioration mechanism of HBT's frequencycharacteristics due to substrate resistivity is discussed, andthe relation between fT , fm and substrate resistivity is analyzedbased on 2-port network theory. By employing SOS/SOIsubstrates and a self-designed island isolation method, mostof the capacitive parasitic parameters are effectively reduced.Si/SiGe HBT's horizontal and vertical structures are designedbased on SOS/SOI substrates, and an emitter-self-alignedtechnique is developed to reduce contact resistance andjunction area at given feature size, which greatly improvesHBT's frequency characteristics (4 refs.)
Inspec No.: 8251490
153 Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors
Author(s): R.D. Schrimpf (Affiliation: Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA)
Journal: Int. J. High Speed Comput. (Singapore), vol.14, no.2, p.503-17 (June 2004)
Publisher: World Scientific, Singapore
Language: English
ISSN: 0129-0533
Document type: Journal article
Abstract: The current gain of irradiated bipolar junctiontransistors decreases due to increased recombination currentin the emitter-base depletion region and the neutral base. Thisrecombination current depends on the interaction of twofactors: (1) decreased minority-carrier lifetime at the Si/SiO2interface or in the bulk Si and (2) changes in surface potentialcaused by charge in the oxide. In npn transistors, these twofactors both result in increased base current, while in pnpdevices, positive charge in the oxide moderates the increasein base current due to surface recombination. In sometechnologies, the amount of degradation that occurs at a giventotal dose increases as the dose rate decreases. Thisenhanced low-dose-rate sensitivity results from space-chargeeffects produced by slowly transporting holes and protons inthe oxide that covers the emitter-base junction (69 refs.)
Inspec No.: 8252001
154 Development of high frequency power Si1-xGex/Si HBT
Author(s): Xue Chun-Lai, Cheng Bu-Wen, Yao Fei, Wang Qi-Ming (Affiliation: Inst. of Semicond., Chinese Acad. of Sci., Beijing, China)
Journal: Micronanoelectron. Technol. (China), vol.41, no.9, p.14-21 (2004)
Publisher: Editorial Board of
Micronanoelectronic Technol, China
Language: Chinese
ISSN: 1671-4776
Document type: Journal article
Abstract: An overview of the development of Si1-xGex/Si HBTis presented. Compared to III-V group material, power Si1-xGex/Si HBT has many advantages in RF and wirelessapplication. Some main progress of research anddevelopment on Si1-xGex/Si HBT are reviewed in the paper.Some problems in the research and technics are alsodiscussed. Future prospects are explored (38 refs.)
Inspec No.: 8252017
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