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180 High-side switch for motors and lamps
Author(s): K. Pandya (Affiliation: Vishay Siliconix, Santa Clara,CA, USA)
Journal: Power Electron. Technol. (USA), vol.30, no.9, p.22-6 (Sept. 2004)
Publisher: Intertec Publishing, USA
Language: English
ISSN: 1523-4908
Document type: Journal article
Abstract: A high-side fully protected MOSFET switch for lowpowerunidirectional DC motor control and filament lamp isrepresented in this paper. The system cost is optimized as allcontrol functions are integrated into the IC, which is an integralpart of the MOSFET package. The control IC offers essentialprotection against adverse operating conditions such asovercurrent, short circuit, over/undervoltage andovertemperature
Inspec No.: 8249748
181 New developments in GaN HFETs
Author(s): Xue Fang-Shi (Affiliation: Nanjing Electron. Devices Inst., China)
Journal: Micronanoelectron. Technol. (China), vol.41, no.9, p.1-13 (2004)
Publisher: Editorial Board of Micronanoelectronic Technol, China
Language: Chinese
ISSN: 1671-4776
Document type: Journal article
Abstract: New developments in the growth, fabrication andperformance of III-nitride heterojunction field effect transistor(HFET) structures and devices are summarized in this paper.The new trends in developing high power high frequencyHFETs and device commercializing are emphasized, and sumup some problems in performance optimization andcommercialization of GaN HFET such as two dimensionalelectric field and electron states, nanometer metal anddielectric layers, strain energy band engineering, and dielectricpotential barrier, etc (61 refs.)
Inspec No.: 8252016
182 Exploring the limits of transistor scaling with electron microscopy
Author(s): D.A. Muller, F.H. Baumann (Affiliation: Lucent Technol., Bell Labs., Murray Hill, NJ, USA), P.M. Voyles, G.D. Wilk
Editor(s): A.G.Cullis, P.A.Midgley
Conference: Microscopy of Semiconducting Materials
Conference, Cambridge, UK
Conference Date: 31 March-3 April 2003
Publication: Microscopy of Semiconducting Materials Conference (Inst. of Phys. Conference Series No.180)
Publisher: Inst. of Phys, UK, 2004
Language: English
ISBN: 0 7503 0979 2 Page: 1-10
Document type: Conference paper
Abstract: The smallest features on transistors used incomputer circuits today have approached atomic dimensions:the SiO2 gate oxides are between 5 and 8 silicon atoms thickand the concentration of dopant atoms has increased to thepoint that electrically inactive dopant clusters as small as afew atoms are common enough to affect device performance.We have used atomic-resolution STEM with single atomsensitivity to identify the size, structure and distribution ofclusters responsible for the saturation of charge carriers andaddress the question of how many atoms are needed beforethe gate oxide loses its bulk properties. This provides achallenge for the design of replacement gate dielectrics, manyof which contain a few monolayers of SiO2 (38 refs.)
Inspec No.: 8253353
183 Coreless integrated transformer gate drive circuit for power MOSFET/IGBT
Author(s): P.P. Poulichet, C.M. Tassetti (Affiliation: ESIEE, France), F. Costa, E. Laboure
Conference: EPE-PEMC 2004 11th International Power Electronics and Motion Control Conference, Riga, Latvia
Conference Date: 2-4 Sept. 2004
Sponsor(s): SIEMENS; FESTO; Latvian Council of Sci.; Latvijas Gaze; ARCUS Elektronika; Rebir; ABB; ELWO; TTP
Publication: EPE-PEMC 2004 11th International Power Electronics and Motion Control Conference
Publisher: Riga Tech. Univ, Latvia, 2004
Language: English
ISBN: 9984 32 022 7 Page: 2/13-17 Vol.2
Document type: Conference paper
Abstract: This paper is focused on the design and therealization of a gate drive circuit that use a integrated corelesstransformer. This gate drive circuit can be used for MOSFETand IGBT devices. The insulation is often required for thedrive of power transistor. This transformer can be integratednear the power transistor and as it not requires manualwinding, it will reduce the cost of the gate drive circuit. In orderto reduce the resistance of the primary and the secondary, thewinding is realized with copper electroplated. Lift offtechniques was used to remove the seed layer necessary forthe copper electroplating. The realization of the gate driveelectronic circuit is presented. The low frequencymeasurements of the switching of a power transistor will beperformed. Experimental results in frequency domains for theintegrated transformer and in time domains for the gate drivecircuit will be presented in the paper (5 refs.)
Inspec No.: 8254048
184 Third quadrant output characteristics in high density trench MOSFETs
Author(s): T. Lopez, R. Elferich (Affiliation: Philips Res. Lab., Aachen, Germany), N. Koper, T. Tolle, T. Duerbaum
Conference: EPE-PEMC 2004 11th International Power Electronics and Motion Control Conference, Riga, Latvia
Conference Date: 2-4 Sept. 2004
Sponsor(s): SIEMENS; FESTO; Latvian Council of Sci.; Latvijas Gaze; ARCUS Elektronika; Rebir; ABB; ELWO; TTP
Publication: EPE-PEMC 2004 11th International Power Electronics and Motion Control Conference
Publisher: Riga Tech. Univ, Latvia, 2004
Language: English
ISBN: 9984 32 022 7 Page: 2/26-34 Vol.2
Document type: Conference paper
Abstract: This paper investigates the DC output characteristicsof ultra high-density trench MOSFETs for synchronous rectifierapplications. Measurement results show a drain currentasymmetry between the first and third quadrant of the outputcharacteristics that cannot only be attributed to the intrinsicbody diode current. 2D numerical simulations are employed tostudy the drain current distribution through the semiconductorstructure. Current flow lines and carrier concentration graphsreveal the existence of a significant channel current in the subthresholdregion partly responsible of the asymmetry. Thiseffect might be of relevance in the application and thereforeneeds to be considered in any circuital model SPICEsimulations employing a behavioural macroMOSFET modeldepict the impacts on a synchronous buck converter (10 refs.)
Inspec No.: 8254050
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