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200 Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance
Author(s): T. Sugaya, T. Yamane, M. Ogura, K. Komori (Affiliation: Nat. Inst. of Adv. Ind. Sci. & Technol., Japan), K. Yonei
Conference: Sixth International Conference on New Phenomena in Mesoscopic Structures & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, USA
Conference Date: 1-5 Dec. 2003
Journal: Superlattices Microstruct. (UK), vol.34, no.3-6, p.479-84 (Sept.-Dec. 2003)
Publisher: Academic Press, UK
Language: English
ISSN: 0749-6036, Full text
Document type: Conference paper in journal
Abstract: Pseudomorphic trench-type InGaAs/InAlAsquantum-wire field-effect transistors (QWR-FET) are realizedby selective molecular beam epitaxy. The pseudomorphicQWR-FET has a negative differential resistance (NDR) effectwith a low source-drain voltage (0.3 V). The NDR spectra areclearly observed in the 50-220 K temperature range. Theoperating current of the pseudomorphic QWR-FET is twicethat of a lattice-matched QWR-FET, and this is thought to bedue to the higher electron mobility (10 refs.)
Inspec No.: 8249790
201 Towards new applications of ion tracks
Author(s): J.-H. Zollondz, A. Weidinger (Affiliation: Dept. SE2, Hahn-Meitner-Inst., Berlin, Germany)
Conference: TRACKS03 'The Evolution of Ion Tracks in Matter - from the Initial Excitation to Columnar Nano Structures' Summer School, Muhlhausen, Germany
Conference Date: 8-15 Sept. 2004
Journal: Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. (Netherlands), vol.225, no.1-2, p.178-83 (Aug. 2004)
Publisher: Elsevier, Netherlands
Language: English
ISSN: 0168-583X, Full text
Document type: Conference paper in journal
Abstract: Ion tracks can be used as a tool to build nanodevices.The concept is that the small diameter of the track ofaround 10 nm defines the lateral dimension; the length of thestructure is given by the film thickness and can vary from lessthan a nanometer to several micrometers. Useful structures inthis sense are the recently discovered conducting ion tracks indiamond-like carbon films. In this paper, we describe theproperties of these tracks and suggest applications of thetracks in nano-electronics and field emission (11 refs.)
Inspec No.: 8249337
202 A single-electron circuit as a discrete dynamical system
Author(s): T. Oya, Y. Takahashi, M. Ikebe, T. Asai, Y. Amemiya (Affiliation: Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan)
Conference: Sixth International Conference on New Phenomena in Mesoscopic Structures & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, USA
Conference Date: 1-5 Dec. 2003
Journal: Superlattices Microstruct. (UK), vol.34, no.3-6, p.253-8 (Sept.-Dec. 2003)
Publisher: Academic Press, UK
Language: English
ISSN: 0749-6036, Full text
Document type: Conference paper in journal
Abstract: A single-electron circuit can be operated as adiscrete dynamical system because it changes its internalstate discontinuously because of electron tunneling. Toconfirm this idea, we designed a sample circuit for discretedynamical operation and confirmed by computer simulationthat the circuit successfully generated a sequence of discretetimeoutputs by following a return map. The concept ofdiscrete dynamical systems will be useful in developing newfunctional systems that consist of quantum devices andnanostructures (2 refs.)
Inspec No.: 8249788
203 Pulling the plug on the current drain [threshold switching]
Author(s): R.L. Franz (Affiliation: Motorola Inc., Libertyville, IL, USA)
Journal: IEEE Circuits Devices Mag. (USA), vol.20, no.6, p.12-16 (Nov.-Dec. 2004)
Publisher: IEEE, USA
Language: English
ISSN: 8755-3996, Full text
Document type: Journal article
Abstract: Power management is one of the main challenges tocontinued development of large-scale integrated circuits. Inparticular, the offstate, or standby leakage, is becoming asignificant fraction of total power consumption as gatedimensions continue to shrink. A review of the literatureidentified many possible solutions in the application ofthreshold-switching devices. This data has apparently neverbeen summarized in one place, suggesting a need for thisarticle. This article discusses the capabilities of classicalamorphous semiconductor switches, and more recentadvances in silicon, III-V materials, and organicsemiconductors that all exhibit threshold-switching properties.Applications and future prospects for the development of moreenergy-efficient devices are discussed. The long-term vision isthat conductors themselves can be engineered to dynamicallysense and adapt their conductivity to active or passive statesas required (46 refs.)
Inspec No.: 8250183
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