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Bipolar wafer foundry - 25V Analog Bipolar Process for Matched Pair NPN Superbeta Transistors, 25V analog linear bipolar process, wafer foundry services - advanced bipolar analog and digital semiconductors - Hte Labs
25V Analog Bipolar Process for Matched Pair NPN Superbeta Transistors, 25V analog linear bipolar process wafer foundry services, Bipolar and CMOS wafer Foundry, Research and Development Laboratories for semiconductor optoelectonics, sensors, microwave, thin film active and passive components
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25V Analog Bipolar Process for Matched Pair NPN Superbeta Transistors
HTE Labs
STANDARD PROCESS OVERVIEW
HTE Labs standard 25V analog bipolar process is specifically designed to satisfy the requirements of matched pair NPN superbeta transistors. The process is a complete BJT process (bipolar juncton isolated transistor process). The degree of matching of various device characteristics are collector current, temperature and layout design dependent. Protection diodes and biasing resistors may be also integrated for demanding custom applications. The 25V analog bipolar process for matched pair NPN superbeta transistors employs N type silicon epitaxial layer on P type silicon substrate. In the standard process up to 8 masks are used: - buried layer (sub collector), isolation, base, emitter, contact mask, thin film resistor mask, metal mask, pad mask. Available devices are vertical NPN transistors, TaN2 - tantalum nitride thin film resistors.
PROCESS OPTIONS
Process Options are available with the standard 25V analog bipolar process for high voltage IC. Process options-enhancements are added to increase the integrated circuit designer's flexibility in designing with HTE Labs analog bipolar process. Optional devices available are as follows: P JFET (p channel junction field effect transistor), EPI N JFET (n channel silicon epitaxial junction field effect transistor) , Schottky diodes,Varactor diodes, PIN diodes, Zenner diodes, laser trim able NiCr (nickel chrome resistors), TaN2 (tantalum nitride resistors) or SiCr (silicon chrome resistors) sputtered thin film resistors. Sheet resistance for the integrated thin film resistors is offered in the widest range from 1ohm / square to 100k ohms / square while the temperature coefficient of resistance is between ±25ppm/°C to ±500ppm/°C.
For metal interconnections HTE Labs process employs up to two layers of metallization, TiW/Au (standard metallization). The interlayer dielectric is 1µm SiO2 while the passivation is Si3N4 or SiO2. Minimum contact size is 3µm x 3µm while the metal pitch is 10µm. For flip chip, chip on board and chip scale packaging applications, Gold bumps or solder bumps are available process options. The 25V custom analog bipolar process employs up to 12 masking layers for all features to be included. What sets HTE Labs apart are couple main process options and capabilities that are not typically acceptable or handled by large wafer foundries.
* Custom developed processes
HTE Labs has the engineering resources and processing capabilities to develop custom processes to fit customer's specific applications. This capability is offered to customers on a contract base only.
* High stability thin film resistors
High stability thin film resistors with sheet resistance as high as 100Kohms/square: The matching of the as deposited thin film resistors is excellent with ought expensive laser trim. The absolute values of resistors are within ± 5% across the wafer and from wafer to wafer. For high speed RF IC process applications, thin film resistors are best suited due to their very low capacitance and low noise.
* High reliability gold metal interconnections
High reliability gold metal interconnections is a standard process feature specifically designed for hybrid circuits applications, chip on board applications and sensors that need to withstand corrosive environment where aluminum or copper metallization are not a suitable choices.
* Process enhancements
MEMS smart sensor integration KOH anisotropic etch, deep RIE etch, LPCVD polysilicon and front to back mask alignment are few process enhancements that are needed in developing and manufacturing of integrated smart pressure sensors, accelerometers and other as such.
* Optoelectronics
Optoelectronic integrated circuits Photo transistors, photodiodes and low capacitance high speed PIN diodes, when integrated with the bipolar process, allow increased flexibility to design and manufacturing of fiber optic amplifiers, optocouplers or optical switches.
25V Analog Bipolar PROCESS for Matched pair NPN superbeta transistors device specification example
DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS
NPN transistor pair HFE
BVCEO
BVCBO
BVEBO
VBE Matching
HFE Matching IC=100µA, VCE=2.5V
ICE=1µA
ICBO=1µA
IEBO=1µA IC=10µA
25
25
6.5 2000
7.1
±500
1.01
µV
TFR thin film resistors Rsq low
Rsq high
TCR low
TCR high 5
100k
±25
±500 ?/sq
?/sq
ppm/°C
ppm/°C
ANALOG BIPOLAR PROCESS - 4" WAFER FOUNDRY SERVICES
At this time HTE Labs offers only 4" wafer fabrication for the analog bipolar wafer foundry services. HTE Labs wafer foundry specializes in prototypes and small runs of standard and custom developed analog bipolar processes. Customers own tooling can be used in most of the cases provided that design rules are compatible with current processes. For more information or a request for quote, please contact HTE Labs using the instant quote form.
WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT
HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE.
HTE Labs provides process specialties wafer foundry, thin film vacuum deposition services, applied thin film
processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry, R&D support, research and development support
for microelectronics and process specialties wafer Fab processing to customers from semiconductors and microelectronics industry. Bipolar wafer foundry
includes the following processes: 20V bipolar process, 45V bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric
isolated bipolar processes. R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation,
industrial process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), MEMS technology,
smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated
circuits technology development for special applications, LiNbO3 applications including SAW, Ti diffusion, light wave guides and Mach-Zender light
modulators. Specialty wafer Fab processing: epi deposition, epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4,
SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag,
gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers
back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump,
wafer probing, dicing services, wafer saw, package development, solid via packages, packaging and test services, failure analysis services, SEM, scanning
electron microscopy, ellipsometer measurements, four point probe measurements.
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