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STANDARD
PROCESS OVERVIEW The
standard 20V 500MHz analog bipolar process employs N type
silicon epitaxial layer on P type silicon substrate. In the standard
process up to 8 masks are used: - buried layer (sub collector),
isolation, base, emitter, contact mask, thin film resistor mask,
metal mask, pad mask. The devices available are vertical NPN transistors,
vertical substrate PNP transistors, lateral PNP transistors, TaN2
- tantalum nitride thin film resistors and MNOS MOS ( metal oxide
semiconductor) capacitors.
PROCESS OPTIONS Process enhancements are added to increase
the integrated circuit designer's flexibility in designing with
HTE Labs analog bipolar process. Optional devices available are
as follows: P JFET (p channel junction field effect
transistor ), EPI N JFET (n channel silicon epitaxial junction
field effect transistor ) , Schottky diodes,Varactor diodes,
PIN diodes,Zenner diodes, laser trim able NiCr (nickel chrome
resistors) , TaN2 ( tantalum nitride resistors ) or SiCr ( silicon
chrome resistors ) sputtered thin film resistors. Sheet
resistance for the integrated thin film resistors is offered in
the widest range from 1ohm/square to 100kohms/square while
the temperature coefficient of resistance is between ±
25 ppm/°C to ± 500ppm/°C.
For metal interconnections HTE Labs process employs up to two
layers of metallization, TiW/Au (standard metallization). The
interlayer dielectric is 1m m SiO2 while the passivation
is Si3N4 or SiO2. Minimum contact
size is 3m m x 3m m while the metal pitch is 10m m. For flip chip,
chip on board and chip scale packaging applications, Gold bumps
or solder bumps are available process options. The 20V 500MHz
custom analog bipolar process employs up to 12 masking layers
for all features to be included.What sets HTE Labs apart are couple
main process options and capabilities that are not typically acceptable
or handled by large wafer foundries
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Custom developed processes
HTE Labs has the engineering resources and processing capabilities
to develop custom processes to fit customer's specific applications.
This capability is offered to customers on a contract base only.
1)- High stability thin film resistors with sheet resistance
as high as 100K ohms / square. The matching of the as deposited
thin film resistors is excellent with ought expensive laser trim.
The absolute values of resistors are within ± 5% across the
wafer and from wafer to wafer. For high speed RF IC process applications,
thin film resistors are best suited due to their very low capacitance
and low noise.
2)- High reliability gold metal interconnections is a standard
process feature specifically designed for hybrid circuits applications,
chip on board applications and sensors that need to withstand corrosive
environment where aluminum or copper metallization are not a suitable
choices.
3)- MEMS smart sensor integration KOH anisotropic etch,
deep RIE etch, LPCVD polysilicon and front to back mask alignment
are few process enhancements that are needed in developing and manufacturing
of integrated smart pressure sensors, accelerometers and other as
such.
4)- Optoelectronic integrated circuits Photo transistors,
photodiodes and low capacitance high speed PIN diodes, when integrated
with the bipolar process, allow increased flexibility to design
and manufacturing of fiber optic amplifiers, optocouplers or optical
switches.
Analog Bipolar process - 4" wafer
foundry services
At this time HTE Labs offers only 4" wafer fabrication
for the analog bipolar wafer foundry services. HTE Labs wafer fab
specializes in prototypes and small runs of standard and custom
developed analog bipolar processes. Customer's own tooling can be
used in most of the cases provided that design rules are compatible
with current processes. For more information or a request for quote,
please contact HTE Labs now, preferably in writing by fax or by
e-mail: HERE
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