|
STANDARD
PROCESS OVERVIEW The
standard 45V 200MHz analog bipolar process employs
N type silicon epitaxial layer on P type silicon substrate.
In the standard process up to 8 masks are used: - buried layer (sub
collector), isolation, base, emitter, contact mask, thin film resistor
mask, metal mask, pad mask. The devices available are vertical NPN
transistors, vertical substrate PNP transistors, lateral PNP transistors,
TaN2 - tantalum nitride thin film resistors and MNOS MOS (
metal oxide semiconductor) capacitors.
PROCESS OPTIONSProcess enhancements are added to increase
the integrated circuit designer's flexibility in designing with
HTE Labs analog bipolar process. Optional devices available are
as follows: P JFET (p channel junction field effect transistor
), EPI N JFET (n channel silicon epitaxial junction field
effect transistor ) , Schottky diodes,Varactor diodes, PIN
diodes,Zenner diodes, laser trim able NiCr (nickel chrome resistors)
, TaN2 ( tantalum nitride resistors ) or SiCr ( silicon chrome resistors
) sputtered thin film resistors. Sheet resistance for
the integrated thin film resistors is offered in the widest range
from 1ohm / square to 100k ohms / square while the temperature
coefficient of resistance is between ± 25 ppm/°C to ±
500ppm/°C.
For metal interconnections HTE Labs process employs up to two layers
of metallization, TiW/Au (standard metallization). The interlayer
dielectric is 1m m SiO2 while the passivation is Si3N4
or SiO2. Minimum contact size is 3m m x 3m m while the
metal pitch is 10m m. For flip chip, chip on board and chip scale
packaging applications, Gold bumps or solder bumps are available
process options. The 45V 200MHz custom analog bipolar
process employs up to 12 masking layers for all features to be included.
What sets HTE Labs apart are couple main process options and capabilities
that are not typically acceptable or handled by large wafer foundries:
|
0)-
Custom developed processesHTE Labs has the engineering resources
and processing capabilities to develop custom processes to fit customer's
specific applications. This capability is offered to customers on
a contract base only.
1)- High stability thin film resistors with sheet resistance
as high as 100K ohms / square. The matching of the as deposited
thin film resistors is excellent with ought expensive laser trim.
The absolute values of resistors are within ± 5% across
the wafer and from wafer to wafer. For high speed RF IC process
applications, thin film resistors are best suited due to their very
low capacitance and low noise.
2)- High reliability gold metal interconnections is
a standard process feature specifically designed for hybrid circuits
applications, chip on board applications and sensors that need to
withstand corrosive environment where aluminum or copper metallization
are not a suitable choices.
3)- MEMS smart sensor integration KOH anisotropic etch,
deep RIE etch, LPCVD polysilicon and front to back mask alignment
are few process enhancements that are needed in developing and manufacturing
of integrated smart pressure sensors, accelerometers and other as
such.
4)- Optoelectronic integrated circuits Photo transistors,
photodiodes and low capacitance high speed PIN diodes, when integrated
with the bipolar process, allow increased flexibility to design
and manufacturing of fiber optic amplifiers, optocouplers or optical
switches.
Analog Bipolar process - 4" wafer
foundry services
At this time HTE Labs offers only 4" wafer fabrication
for the analog bipolar wafer foundry services. HTE Labs wafer fab
specializes in prototypes and small runs of standard and custom
developed analog bipolar processes. Customer's own tooling can be
used in most of the cases provided that design rules are compatible
with current processes. For more information or a request for quote,
please contact HTE Labs now, preferably in writing by fax or by
e-mail: HERE
|
