LOW PRESSURE CHEMICAL VAPOR DEPOSITION LPCVD SILICON NITRIDE DEPOSITION LOW STRESS SILICON NITRIDE DEPOSITION   LOW PRESSURE CHEMICAL VAPOR DEPOSITION LPCVD SILICON NITRIDE DEPOSITION LOW STRESS SILICON NITRIDE DEPOSITION 100nm HTE Labs   PROPERTIES / FEATURES APPLICATIONS Chemical Composition=SiNx  Passivation of junctions, protection of silicon surface. Refractive Index=2.2±0.1  Gate dielectric for MOS FETS, dielectric for MOS Capacitors. Dielectric Constant>7.0 silicon rich  Masking layer during dopant predeposition and diffusion. Uniformity=5%-10% Masking layer during Ion Implantation process. Si3N4 Color chart and calculators HTE AN102. Insulation between conductors and silicon surface. More properties @ HTE LABS APP NOTES Etch stop, sacrificial layer, Ion Implant screen layer, MEMS, etc. SHORT PROCESS DESCRIPTION Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip. Silicon nitride deposition is performed in quartz tubes in an atmosphere of NH3, and chlorinated silane. Temperature range is 800°C to 900°C. WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE. PROCESS ORDERING INFORMATION WAFER TYPEWAFER SIZE[mm] TEMPERATURE[°C] THICKNESS[nm] DEPOSITION TIME[hours] Select waferSiSiCSOISiGeFused QuatzSapphireOther Select size25 [1"]50 [2"]75 [3"]100 [4"]125 [5"]150 [6"]200 [8"]300 [12"]Other Process parametter TIME is calculated using a deposition rate of 2nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each process to customer specification such that the end refractive index, thickness and film uniformity are within specified tolerance. STANDARD PROCESS PRICE LIST PROCESS CODEWAFER TYPEWAFER SIZE[mm]TEMPERATURE[°C]THICKNESS[nm]TIME[h]MINIM ORDERUNIT PRICE[$] [SI][W100][LPCVD][SiNx][100NM]SI1009001000.8331334.933       [SIC][W100][LPCVD][SiNx][100NM]SIC1009001000.8331334.933       [SOI][W100][LPCVD][SiNx][100NM]SOI1009001000.8331334.933       [SIGE][W100][LPCVD][SiNx][100NM]SIGE1009001000.8331334.933       [QZ][W100][LPCVD][SiNx][100NM]QZ1009001000.8331334.933       [SAP][W100][LPCVD][SiNx][100NM]SAP1009001000.8331334.933       [XYZ][W100][LPCVD][SiNx][100NM]XYZ1009001000.8331334.933         Minimum order for LPCVD is 13 wafers. Unit price does not include SET-UP Charges, RUSH charges or cost of wafers. INSTANT QUOTE PROCESS CODE QTYEMAIL    ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for Standard processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate materials from its own inventory or from third party supplier. SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during shipping. SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an existing firm order, pending qualification of a process. HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and technologies provided minimum order quantities are met. HTE LABS has made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE LABS specific written consent. Home>LPCVD SILICON NITRIDE LOW STRESS CVD SILICON RICH>Last updated: HTE LABSwww.htelabs.com Tel:(408)986-8026 Fax:(408)986-8027HTE LABS   Display settings for best viewing:Current display settings: Screen resolution: 1024x768Screen resolution: Color quality: 16 bitColor quality: bit © 1990- HTE LABS All rights reserved. No material from this site may be used or reproduced without permission.
 

HTE Labs Logo
LOW PRESSURE CHEMICAL VAPOR DEPOSITION
LPCVD SILICON NITRIDE DEPOSITION
LOW STRESS SILICON NITRIDE DEPOSITION 100nm
HTE Labs

 

PROPERTIES / FEATURES   APPLICATIONS
Chemical Composition=SiNx   Passivation of junctions, protection of silicon surface.
Refractive Index=2.2±0.1   Gate dielectric for MOS FETS, dielectric for MOS Capacitors.
Dielectric Constant>7.0 silicon rich   Masking layer during dopant predeposition and diffusion.
Uniformity=5%-10%   Masking layer during Ion Implantation process.
Si3N4 Color chart and calculators HTE AN102.   Insulation between conductors and silicon surface.
More properties @ HTE LABS APP NOTES   Etch stop, sacrificial layer, Ion Implant screen layer, MEMS, etc.

SHORT PROCESS DESCRIPTION
Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip. Silicon nitride deposition is performed in quartz tubes in an atmosphere of NH3, and chlorinated silane. Temperature range is 800°C to 900°C.

WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT
HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE.

PROCESS ORDERING INFORMATION

WAFER TYPE WAFER SIZE
[mm]
TEMPERATURE
[°C]
THICKNESS
[nm]
DEPOSITION TIME
[hours]

Process parametter TIME is calculated using a deposition rate of 2nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each process to customer specification such that the end refractive index, thickness and film uniformity are within specified tolerance.

STANDARD PROCESS PRICE LIST

PROCESS CODE WAFER TYPE WAFER SIZE
[mm]
TEMPERATURE
[°C]
THICKNESS
[nm]
TIME
[h]
MINIM ORDER UNIT PRICE
[$]
[SI][W100][LPCVD][SiNx][100NM] SI 100 900 100 0.833 13 34.933      
[SIC][W100][LPCVD][SiNx][100NM] SIC 100 900 100 0.833 13 34.933      
[SOI][W100][LPCVD][SiNx][100NM] SOI 100 900 100 0.833 13 34.933      
[SIGE][W100][LPCVD][SiNx][100NM] SIGE 100 900 100 0.833 13 34.933      
[QZ][W100][LPCVD][SiNx][100NM] QZ 100 900 100 0.833 13 34.933      
[SAP][W100][LPCVD][SiNx][100NM] SAP 100 900 100 0.833 13 34.933      
[XYZ][W100][LPCVD][SiNx][100NM] XYZ 100 900 100 0.833 13 34.933      
 
Minimum batch for LPCVD is 13 wafers and maximum is 25 wafers or 50 wafers depending on the wafer size and equipment availability at the time of RFQ. Unit price does not include SET-UP Charges, RUSH charges or cost of wafers.

INSTANT QUOTE
PROCESS CODE QTY EMAIL  
 
ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for Standard processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate materials from its own inventory or from third party supplier.
SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during shipping.
SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an existing firm order, pending qualification of a process.
HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and technologies provided minimum order quantities are met.
HTE LABS has made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE LABS specific written consent.

Home>LPCVD SILICON NITRIDE LOW STRESS CVD SILICON RICH> Last updated: July 06, 2009

HTE LABS Tel:(408)758-8691 Fax:(408)986-8027

©1990-2018 HTE LABS All rights reserved. No material from this site may be used or reproduced without permission.