PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Amorphous Silicon a:Si deposition Plasma Enhanced CVD - PECVD Amorphous Silicon a:Si 3000nm - a:Si 3000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Plasma Enhanced CVD - PECVD Amorphous Silicon a:Si 3000nm - a:Si 3000nm - wafer PECVD process by HTE Labs
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Amorphous Silicon a:Si deposition Plasma Enhanced CVD - PECVD Amorphous Silicon a:Si 3000nm - a:Si 3000nm
Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor manufacturing to obtain amorphous
silicon a:Si thin films. PECVD thin films are especially used to form gate electrodes for thin film transistors TFT, microphotonic
IC, MEMS, sensors, detectors as well as multiple junctions photovoltaic solar cells. Plasma Enhanced Chemical Vapor Deposition of
PECVD amorphous silicon films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers
[25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor
deposition of amorphous silicon a:Si processes are available for device grade silicon wafers, fused silica wafers, silicon carbide,
sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature
chemical vapor depositions of amorphous silicon processes are ALSO available for patterned wafers with exposed metals including
aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers
should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending
customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Amorphous silicon
films are prepared by plasma enhanced chemical vapor deposition (PECVD) with SiH4 precursors and argon at 280°C.
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Amorphous Silicon a:Si deposition Plasma Enhanced CVD - PECVD
Amorphous Silicon a:Si 3000nm - a:Si 3000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Plasma Enhanced CVD - PECVD Amorphous Silicon a:Si 3000nm - a:Si 3000nm - wafer PECVD process by HTE Labs PLASMA
ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Amorphous Silicon a:Si deposition Plasma Enhanced CVD - PECVD Amorphous
Silicon a:Si 3000nm - a:Si 3000nm HTE Labs logo PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Amorphous Silicon a:Si
deposition Plasma Enhanced CVD - PECVD Amorphous Silicon a:Si 3000nm HTE Labs PROPERTIES / FEATURES APPLICATIONS
Chemical Composition: a:Si Refractive Index=3.75±0.1 Dielectric Constant=- Uniformity=0.1 NOTE: PECVD a:Si films
contain Hydrogen Hydrogen free a:Si is available. MEMS- base material, transparent sensors. Gate for active matrix thin
film Transistors TFT OLED displays. Amorphous silicon microphotonic waveguides. Amorphous Silicon Active Pixels for
X-Ray Detection. Neutrons, gama rays radiation resistant amorphous silicon sensors. Triple-junction amorphous silicon
photo voltaic solar cells. SHORT PROCESS DESCRIPTION Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor manufacturing to obtain amorphous
silicon a:Si thin films. PECVD thin films are especially used to form gate electrodes for thin film transistors TFT, microphotonic
IC, MEMS, sensors, detectors as well as multiple junctions photovoltaic solar cells. Plasma Enhanced Chemical Vapor Deposition of
PECVD amorphous silicon films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers
[25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor
deposition of amorphous silicon a:Si processes are available for device grade silicon wafers, fused silica wafers, silicon carbide,
sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature
chemical vapor depositions of amorphous silicon processes are ALSO available for patterned wafers with exposed metals including
aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers
should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending
customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Amorphous silicon
films are prepared by plasma enhanced chemical vapor deposition (PECVD) with SiH4 precursors and argon at 280°C.
WAFER FOUNDRY - R&D
SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as
well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D
related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and
capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT
PAGE. PROCESS ORDERING INFORMATION WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm]
GENERATE PROCESS NAME/TIME DEPOSITION TIME [hours] Process parametter TIME is calculated using a deposition rate of
50nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each
process to customer specification such that the end refractive index, thickness and film uniformity are within
specified tolerance. STANDARD PROCESS PRICE LIST PROCESS CODE WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers]
TEMPERATURE [°C] THICKNESS [nm] TIME [h] MINIM ORDER UNIT PRICE [$] [SI][W100][PECVD][A:SI][3000NM] SI 100 8 280 3000 1
8 53.125 [SIC][W100][PECVD][A:SI][3000NM] SIC 100 8 280 3000 1 8 53.125 [SOI][W100][PECVD][A:SI][3000NM] SOI 100 8 280
3000 1 8 53.125 [SIGE][W100][PECVD][A:SI][3000NM] SIGE 100 8 280 3000 1 8 53.125 [QZ][W100][PECVD][A:SI][3000NM] QZ 100
8 280 3000 1 8 53.125 [SAP][W100][PECVD][A:SI][3000NM] SAP 100 8 280 3000 1 8 53.125 [XYZ][W100][PECVD][A:SI][3000NM]
XYZ 100 8 280 3000 1 8 53.125 Minimum batch for PECVD is 8 wafers for 100mm diameter. Unit price does not include
SET-UP Charges, RUSH charges or cost of wafers. INSTANT QUOTE PROCESS CODE QTY EMAIL ORDERING: Registered customers can
order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is
issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE
LABS sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for
Standard processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request
substrate materials from its own inventory or from third party supplier. SHIPPING & PACKING: For certain processes,
customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present].
All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped
in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and
heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and
electrostatic charge generated during shipping. SAMPLES: Due to the nature of this product line, free samples are not
available, unless they are against an existing firm order, pending qualification of a process. HTE LABS guarantees
continuous supply and availability of any of it's standard or custom developed processes and technologies provided
minimum order quantities are met. HTE LABS has made every effort to have this information as accurate as possible.
However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties
which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without
prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems
which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment,
submarine, or nuclear facility applications without HTE LABS specific written consent. Home> PLASMA ENHANCED CHEMICAL
VAPOR DEPOSITION PECVD SiO2 SiON SiN a:Si SiC SiCN> Last updated: HTE LABS www.htelabs.com
USA Tel:(408)986-8026 Fax:(408)986-8027 HTE LABS © 1990- HTE LABS All rights reserved. No material from this site may
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