PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 3000nm - SiON 3000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 3000nm - SiON 3000nm - wafer PECVD process by HTE Labs
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 3000nm - SiON 3000nm
Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing
to obtain silicon oxinitride thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even
into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer
dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical
Vapor Deposition of PECVD oxinitride films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in
and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature
chemical vapor deposition of oxinitride SiON processes are available for device grade silicon wafers, fused silica wafers, silicon
carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low
temperature chemical vapor depositions of oxinitride processes are ALSO available for patterned wafers with exposed metals including
aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers
should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending
customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Oxinitride films are
prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors at 280°C.
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD
Silicon Oxinitride SiON 3000nm - SiON 3000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR
DEPOSITION Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 3000nm - SiON 3000nm - wafer PECVD process by HTE Labs
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon
Oxinitride SiON 3000nm - SiON 3000nm HTE Labs logo PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride
SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 3000nm HTE Labs PROPERTIES / FEATURES APPLICATIONS
Chemical Composition: SiON Refractive Index=1.75±0.1 Dielectric Constant=varies Uniformity=0.1 SiON Color chart HTE
AN102 More properties @ HTE LABS APP NOTES Passivation of Integrated Circuits, protection of wafer surface. Dielectric
for MNOS and MIM Capacitors. Dual Damascene, STI shallow trench isolation, ILD. Wear Coating, Barrier Layer, masking
layer, adhesion layer. Insulation between conductors, Inter-layer Dielectric ILD. Thick dielectrics, etch stop,
sacrificial layer, MEMS, etc. SHORT PROCESS DESCRIPTION Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing
to obtain silicon oxinitride thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even
into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer
dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical
Vapor Deposition of PECVD oxinitride films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in
and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature
chemical vapor deposition of oxinitride SiON processes are available for device grade silicon wafers, fused silica wafers, silicon
carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low
temperature chemical vapor depositions of oxinitride processes are ALSO available for patterned wafers with exposed metals including
aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers
should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending
customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Oxinitride films are
prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors at 280°C.
WAFER FOUNDRY - R&D
SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as
well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D
related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and
capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT
PAGE. PROCESS ORDERING INFORMATION WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm]
GENERATE PROCESS NAME/TIME DEPOSITION TIME [hours] Process parametter TIME is calculated using a deposition rate of
25nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each
process to customer specification such that the end refractive index, thickness and film uniformity are within
specified tolerance. STANDARD PROCESS PRICE LIST PROCESS CODE WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers]
TEMPERATURE [°C] THICKNESS [nm] TIME [h] MINIM ORDER UNIT PRICE [$] [SI][W100][PECVD][SION][3000NM] SI 100 8 280 3000 2
8 68.75 [SIC][W100][PECVD][SION][3000NM] SIC 100 8 280 3000 2 8 68.75 [SOI][W100][PECVD][SION][3000NM] SOI 100 8 280
3000 2 8 68.75 [SIGE][W100][PECVD][SION][3000NM] SIGE 100 8 280 3000 2 8 68.75 [QZ][W100][PECVD][SION][3000NM] QZ 100 8
280 3000 2 8 68.75 [SAP][W100][PECVD][SION][3000NM] SAP 100 8 280 3000 2 8 68.75 [XYZ][W100][PECVD][SION][3000NM] XYZ
100 8 280 3000 2 8 68.75 Minimum batch for PECVD is 8 wafers for 100mm diameter. Unit price does not include SET-UP
Charges, RUSH charges or cost of wafers. INSTANT QUOTE PROCESS CODE QTY EMAIL ORDERING: Registered customers can order
online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued
instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS
sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for Standard
processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate
materials from its own inventory or from third party supplier. SHIPPING & PACKING: For certain processes, customer
should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers
shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable
minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall
cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic
charge generated during shipping. SAMPLES: Due to the nature of this product line, free samples are not available,
unless they are against an existing firm order, pending qualification of a process. HTE LABS guarantees continuous
supply and availability of any of it's standard or custom developed processes and technologies provided minimum order
quantities are met. HTE LABS has made every effort to have this information as accurate as possible. However, no
responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties which may
result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice.
HTE LABS processes and technologies are not authorized for and should not be used within support systems which are
intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or
nuclear facility applications without HTE LABS specific written consent. Home> PLASMA ENHANCED CHEMICAL VAPOR
DEPOSITION PECVD SiO2 SiON SiN a:Si SiC SiCN> Last updated: HTE LABS www.htelabs.com
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