PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxinitride thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition of PECVD oxinitride films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of oxinitride SiON processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of oxinitride processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Oxinitride films are prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors at 280°C. PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm - SiON 5000nm HTE Labs logo PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Oxinitride SiON deposition Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm HTE Labs PROPERTIES / FEATURES APPLICATIONS Chemical Composition: SiON Refractive Index=1.75±0.1 Dielectric Constant=varies Uniformity=0.1 SiON Color chart HTE AN102 More properties @ HTE LABS APP NOTES Passivation of Integrated Circuits, protection of wafer surface. Dielectric for MNOS and MIM Capacitors. Dual Damascene, STI shallow trench isolation, ILD. Wear Coating, Barrier Layer, masking layer, adhesion layer. Insulation between conductors, Inter-layer Dielectric ILD. Thick dielectrics, etch stop, sacrificial layer, MEMS, etc. SHORT PROCESS DESCRIPTION Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxinitride thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition of PECVD oxinitride films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of oxinitride SiON processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of oxinitride processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Oxinitride films are prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors at 280°C. WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE. PROCESS ORDERING INFORMATION WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm] GENERATE PROCESS NAME/TIME DEPOSITION TIME [hours] Process parametter TIME is calculated using a deposition rate of 25nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each process to customer specification such that the end refractive index, thickness and film uniformity are within specified tolerance. STANDARD PROCESS PRICE LIST PROCESS CODE WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm] TIME [h] MINIM ORDER UNIT PRICE [$] [SI][W100][PECVD][SION][5000NM] SI 100 8 280 5000 3.333 8 89.578 [SIC][W100][PECVD][SION][5000NM] SIC 100 8 280 5000 3.333 8 89.578 [SOI][W100][PECVD][SION][5000NM] SOI 100 8 280 5000 3.333 8 89.578 [SIGE][W100][PECVD][SION][5000NM] SIGE 100 8 280 5000 3.333 8 89.578 [QZ][W100][PECVD][SION][5000NM] QZ 100 8 280 5000 3.333 8 89.578 [SAP][W100][PECVD][SION][5000NM] SAP 100 8 280 5000 3.333 8 89.578 [XYZ][W100][PECVD][SION][5000NM] XYZ 100 8 280 5000 3.333 8 89.578 Minimum batch for PECVD is 8 wafers for 100mm diameter. Unit price does not include SET-UP Charges, RUSH charges or cost of wafers. INSTANT QUOTE PROCESS CODE QTY EMAIL ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for Standard processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate materials from its own inventory or from third party supplier. SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during shipping. SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an existing firm order, pending qualification of a process. HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and technologies provided minimum order quantities are met. HTE LABS has made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE LABS specific written consent. Home> PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PECVD SiO2 SiON SiN a:Si SiC SiCN> Last updated: HTE LABS Tel:(408)986-8026 Fax:(408)986-8027 HTE LABS 1990- HTE LABS All rights reserved. No material from this site may be used or reproduced without permission. Display settings for best viewing: Current display settings: Screen resolution: 1024x768 Screen resolution: Color quality: 16 bit Color quality: bit
 
 
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
pecvd Silicon Oxinitride SiON deposition
Plasma Enhanced CVD - PECVD Silicon Oxinitride SiON 5000nm
 
 

PROPERTIES / FEATURES   APPLICATIONS
Chemical Composition: SiON
Refractive Index=1.75±0.1
Dielectric Constant=varies
Uniformity=0.1
SiON Color chart HTE AN102
More properties @ HTE LABS APP NOTES
 
Passivation of Integrated Circuits, protection of wafer surface.
Dielectric for MNOS and MIM Capacitors.
Dual Damascene, STI shallow trench isolation, ILD.
Wear Coating, Barrier Layer, masking layer, adhesion layer.
Insulation between conductors, Inter-layer Dielectric ILD.
Thick dielectrics, etch stop, sacrificial layer, MEMS, etc.

SHORT PROCESS DESCRIPTION
Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxinitride thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition of PECVD oxinitride films standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of oxinitride SiON processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of oxinitride processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. Oxinitride films are prepared by plasma enhanced chemical vapor deposition (PECVD) with N2O, NH3 and SiH4 precursors at 280°C.

WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT
HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE.

PROCESS ORDERING INFORMATION

WAFER TYPE WAFER SIZE
[mm]
BATCH SIZE
[wafers]
TEMPERATURE
[°C]
THICKNESS
[nm]
GENERATE PROCESS NAME/TIME DEPOSITION TIME
[hours]

Process parametter TIME is calculated using a deposition rate of 25nm/min as the worst case scenario. Actual deposition rate may vary. HTE Labs whenever feasible is tailoring each process to customer specification such that the end refractive index, thickness and film uniformity are within specified tolerance.

STANDARD PROCESS PRICE LIST

PROCESS CODE WAFER TYPE WAFER SIZE
[mm]
BATCH SIZE
[wafers]
TEMPERATURE
[°C]
THICKNESS
[nm]
TIME
[h]
MINIM ORDER UNIT PRICE
[$]
[SI][W100][PECVD][SION][5000NM] SI 100 8 280 5000 3.333 8 89.578
[SIC][W100][PECVD][SION][5000NM] SIC 100 8 280 5000 3.333 8 89.578
[SOI][W100][PECVD][SION][5000NM] SOI 100 8 280 5000 3.333 8 89.578
[SIGE][W100][PECVD][SION][5000NM] SIGE 100 8 280 5000 3.333 8 89.578
[QZ][W100][PECVD][SION][5000NM] QZ 100 8 280 5000 3.333 8 89.578
[SAP][W100][PECVD][SION][5000NM] SAP 100 8 280 5000 3.333 8 89.578
[XYZ][W100][PECVD][SION][5000NM] XYZ 100 8 280 5000 3.333 8 89.578
 
Minimum batch for PECVD is 8 wafers for 100mm diameter. Unit price does not include SET-UP Charges, RUSH charges or cost of wafers.

INSTANT QUOTE
PROCESS CODE QTY EMAIL  

ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for Standard processes is 2-4 working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate materials from its own inventory or from third party supplier.
SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during shipping.
SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an existing firm order, pending qualification of a process.
HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and technologies provided minimum order quantities are met.
HTE LABS has made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE LABS specific written consent.

Home> PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PECVD SiO2 SiON SiN a:Si SiC SiCN> Last updated: July 06, 2009

HTE LABS Tel:(408)758-8691 Fax:(408)986-8027

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