SILICON THERMAL OXIDATION - DRY OXIDATION CUSTOM PROCESSES Silicon thermal oxidation processes are available only for prime wafers,
delivered in sealed containers [original manufacturer seal must be present] Wafers are RCA, SC1 - SC2, Dilute HF Dipped prior to final
DI water rinse and spindry HTE LABS sputter deposition services, thin film vacuum deposition,wafer foundry, bipolar process development,
contract R&D, bipolar wafer foundry services, thin film vacuum deposition services
CUSTOM SILICON THERMAL OXIDATION DRY OXIDATION HTE Labs
PROPERTIES / FEATURES APPLICATIONS Chemical Composition=SiO2 Passivation of junctions, protection of silicon surface. Refractive Index=1.462 Gate dielectric
for MOS FETS, dielectric for MOS Capacitors. Dielectric Constant=3.4 Masking layer during dopant predeposition and
diffusion. Uniformity=5% Masking layer during Ion Implantation process. SiO2 Color chart and calculators HTE AN101
Insulation between conductors and silicon surface. More properties @ HTE LABS APP NOTES Etch stop, sacrificial layer,
Ion Implant screen layer, etc. SHORT PROCESS DESCRIPTION Silicon thermal oxidation processes are available only for
prime wafers, delivered in sealed containers [original manufacturer seal must be present] Wafers are RCA, SC1 - SC2,
Dilute HF Dipped prior to final DI water rinse and spindry. As a standard procedure, wafers are loaded in quartz tubes
at 600°C and are unloaded after a ramp down also at 600°C. Silicon dry thermal oxidation is performed in an atmosphere
of H2. Minim temperature is 900°C. WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS is helping customers
to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations.
Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is
encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the
strictest confidentiality, navigate to CONTACT PAGE. PROCESS ORDERING INFORMATION SI ORIENTATIONWAFER SIZE[mm]
TEMPERATURE[°C] THICKNESS[nm] TIME[hours] Select orientation[100][111] Select wafer size25 [1"]50 [2"]75 [3"]100
[4"]125 [5"]150 [6"]200 [8"]300 [12"] Select temperature800900950100010501100115012001250 Process parametter
TIME is calculated using Stanford SUPREM 4 software for the <100> and <111> orientation and for low doping levels as the
worst case scenario. Actual oxidation TIME may vary. HTE Labs whenever feasible is tailoring each process to the actual
orientation and doping levels such that the end thickness is within specified tolerance. Due to these factors, for Dry
Oxidation processes oxide thickness tolerance is +/-5%. STANDARD PROCESS PRICE LIST PROCESS CODEORIENTATIONWAFER S
IZE[mm]TEMPERATURE[°C]THICKNESS[nm]TIME[h]MINIM ORDERUNIT PRICE[$]
INSTANT QUOTE PROCESS CODE QTYEMAIL
Minimum batch for thermal oxidation is 25 wafers and maximum is 50 wafers depending on the wafer size and equipment
availability at the time of RFQ. ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL.
A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line
Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non
cancelable binding contracts. DELIVERY: Typical delivery for Standard processes is 2-4 working days ARO. For Custom
processes lead time may vary. HTE Labs may supply on request substrate materials from its own inventory or from third
party supplier. SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed
containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in
suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink
anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable
due to the nuisance caused by particles and electrostatic charge generated during shipping. SAMPLES: Due to the nature of
this product line, free samples are not available, unless they are against an existing firm order, pending qualification of
a process. HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and
technologies provided minimum order quantities are met. HTE LABS has made every effort to have this information as accurate
as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third
parties which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without
prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which
are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or
nuclear facility applications without HTE LABS specific written consent. Home>Silicon Thermal Oxidation>Last updated:
HTE LABSwww.htelabs.com Tel:(408)986-8026 Fax:(408)986-8027HTE LABS Display settings
for best viewing:Current display settings: Screen resolution: 1024x768Screen resolution: Color quality: 16 bitColor
quality: bit ©1990-2007 HTE LABS All rights reserved. No material from this site may be used or reproduced without permission.
|