1 320×256 solar-blind focal plane arrays based on AlxGa1-xN Author(s): R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, M. Razeghi (Affiliation: Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA) Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.11117-1-3 (3 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating at a wavelength of 280nm. The electrical characteristics of the individual pixels are discussed, and the uniformity of the array is presented. The pin photodiode array was hybridized to a 320×256 read-out integrated circuit entirely within our university research lab, and a working 320×256 camera was demonstrated. Several example solar-blind images from the camera are also provided (12 refs.) Inspec No.: 8247060 2 Sb-induced bicrystal ZnO nanobelts Author(s): K. Zou, Xiao-Ying Qi, Xiao-Feng Duan (Affiliation: Inst. of Phys. & Center for Condensed Matter Phys., Chinese Acad. of Sci., Beijing, China), Shao-Min Zhou, Xiao-Hong Zhang) Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.13103-1-3 (3 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: Zinc oxide bicrystal nanobelts of wurtzite structure were synthesized by simple thermal evaporation of a powder mixture of Zn and Sb2O3. The bicrystal nanobelts were found to have a growth direction of [2¯113], widths of 80-200 nm, and lengths up to several hundreds of micrometers. Energy dispersive x-ray spectroscopy and high angle annular dark field images showed that antimony was rich in the grain boundary of the bicrystal nanobelts. It was discovered that both sides of the bicrystal nanobelts were O-terminated toward the grain boundary. The mechanism of formation of the bicrystal nanobelts was also discussed (15 refs.) Inspec No.: 8247121 3 InGaN nano-ring structures for high-efficiency light emitting diodes Author(s): H.W. Choi, C.W. Jeon, C. Liu, I.M. Watson, M.D. Dawson (Affiliation: Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK), P.R. Edwards, R.W. Martin, S. Tripathy, S.J. Chua Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21101-1-3 (10 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm -1 Raman shift hasbeen measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated (9 refs.) Inspec No.: 8247147 4 High-Q whispering-gallery modes in GaAs/AlOx microdisks Author(s): E. Peter, I. Sagnes, G. Guirleo, S. Varoutsis, J. Bloch, A. Lemaitre, P. Senellart (Affiliation: CNRS-Lab. de Photonique et Nanostructures, Marcoussis, France) Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21103-1-3 (10 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: We report on the fabrication of microdisks on an AlOx pedestal. We develop a process using electron beam lithography, a chemical etching, and selective oxidation. InAs self-assembled quantum dots are used as a broad band source to probe the optical modes of the microdisks. With this process, we observe whispering-gallery modes, with quality factors as large as 12 500 for 2-ėm-diam microdisks (18 refs.) Inspec No.: 8247149 5 Synthesis and optical properties of germanium nanorod array fabricated on porous anodic alumina and Si-based templates Author(s): Y.F. Mei (Affiliation: Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China), Z.M. Li, R.M. Chu, Z.K. Tang, G.G. Siu, R.K.Y. Fu, P.K. Chu, W.W. Wu, K.W. Cheah Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21111-1-3 (10 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: A large quantity of monocrystalline germanium nanorods and their arrays were produced on a porous anodic alumina (PAA) template utilizing saturated vapor adsorption, during which the Ge gas pressure was saturated at a high temperature in an airtight quartz tube. Raman scattering and photoluminescence (PL) results were acquired from the Ge nanorod array and discussed in details. Using Si-based PAA template with 25 nm nanopores, Si-based Ge nanorod array with a large area (larger than 1×1 cm2) was obtained and the quantum confinement effect is demonstrated in Raman spectrum (23 refs.) Inspec No.: 8247157 6 Laser bending for high-precision curvature adjustment of microcantilevers Author(s): X.R. Zhang, Xianfan Xu (Affiliation: Sch. of Mech. Eng., Purdue Univ., West Lafayette, IN, USA) Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21114-1-3 (10 Jan. 2005) Publisher: AIP, USA Language: English ISSN: 0003-6951, Full text Document type: Journal article Abstract: This work describes a laser based technique to adjust curvatures of silicon microcantilevers used for chemical and biological detection. In batch fabricated silicon cantilever arrays used for parallel sensing, it is often desirable that all cantilevers have nearly identical curvatures or flatness. We demonstrate that using the laser technique, it is possible to adjust curvatures by an amount as small as 3.5 ėrad, for cantilevers with a typical dimension of 110×13×0.6 ėm (length×width×thickness). Different laser parameters can be applied in order to achieve the required curvature adjustment. A two-dimensional finite element model of laser curvature adjustment is presented which enables the prediction of the laser processing parameters (18 refs.) Inspec No.: 8247160
 

Semiconductor Devices - Miscellaneous articles, abstracts, technical notes, letters, publications
HTE Labs  
 

 
PAPER INFORMATIONPAPER INFORMATION



1 320×256 solar-blind focal plane arrays based on AlxGa1-xN
Author(s): R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, M. Razeghi (Affiliation: Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA)
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.11117-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating at a wavelength of 280nm. The electrical characteristics of the individual pixels are discussed, and the uniformity of the array is presented. The pin photodiode array was hybridized to a 320×256 read-out integrated circuit entirely within our university research lab, and a working 320×256 camera was demonstrated. Several example solar-blind images from the camera are also provided (12 refs.)
Inspec No.: 8247060



2 Sb-induced bicrystal ZnO nanobelts
Author(s): K. Zou, Xiao-Ying Qi, Xiao-Feng Duan (Affiliation: Inst. of Phys. & Center for Condensed Matter Phys., Chinese Acad. of Sci., Beijing, China), Shao-Min Zhou, Xiao-Hong Zhang)
Journal: Appl. Phys. Lett. (USA), vol.86, no.1, p.13103-1-3 (3 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: Zinc oxide bicrystal nanobelts of wurtzite structure were synthesized by simple thermal evaporation of a powder mixture of Zn and Sb2O3. The bicrystal nanobelts were found to have a growth direction of [2¯113], widths of 80-200 nm, and lengths up to several hundreds of micrometers. Energy dispersive x-ray spectroscopy and high angle annular dark field images showed that antimony was rich in the grain boundary of the bicrystal nanobelts. It was discovered that both sides of the bicrystal nanobelts were O-terminated toward the grain boundary. The mechanism of formation of the bicrystal nanobelts was also discussed (15 refs.)
Inspec No.: 8247121



3 InGaN nano-ring structures for high-efficiency light emitting diodes
Author(s): H.W. Choi, C.W. Jeon, C. Liu, I.M. Watson, M.D. Dawson (Affiliation: Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK), P.R. Edwards, R.W. Martin, S. Tripathy, S.J. Chua
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21101-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm -1 Raman shift hasbeen measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated (9 refs.)
Inspec No.: 8247147



4 High-Q whispering-gallery modes in GaAs/AlOx microdisks
Author(s): E. Peter, I. Sagnes, G. Guirleo, S. Varoutsis, J. Bloch, A. Lemaitre, P. Senellart (Affiliation: CNRS-Lab. de Photonique et Nanostructures, Marcoussis, France)
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21103-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: We report on the fabrication of microdisks on an AlOx pedestal. We develop a process using electron beam lithography, a chemical etching, and selective oxidation. InAs self-assembled quantum dots are used as a broad band source to probe the optical modes of the microdisks. With this process, we observe whispering-gallery modes, with quality factors as large as 12 500 for 2-ėm-diam microdisks (18 refs.)
Inspec No.: 8247149



5 Synthesis and optical properties of germanium nanorod array fabricated on porous anodic alumina and Si-based templates
Author(s): Y.F. Mei (Affiliation: Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China), Z.M. Li, R.M. Chu, Z.K. Tang, G.G. Siu, R.K.Y. Fu, P.K. Chu, W.W. Wu, K.W. Cheah
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21111-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: A large quantity of monocrystalline germanium nanorods and their arrays were produced on a porous anodic alumina (PAA) template utilizing saturated vapor adsorption, during which the Ge gas pressure was saturated at a high temperature in an airtight quartz tube. Raman scattering and photoluminescence (PL) results were acquired from the Ge nanorod array and discussed in details. Using Si-based PAA template with 25 nm nanopores, Si-based Ge nanorod array with a large area (larger than 1×1 cm2) was obtained and the quantum confinement effect is demonstrated in Raman spectrum (23 refs.)
Inspec No.: 8247157



6 Laser bending for high-precision curvature adjustment of microcantilevers
Author(s): X.R. Zhang, Xianfan Xu (Affiliation: Sch. of Mech. Eng., Purdue Univ., West Lafayette, IN, USA)
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.21114-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: This work describes a laser based technique to adjust curvatures of silicon microcantilevers used for chemical and biological detection. In batch fabricated silicon cantilever arrays used for parallel sensing, it is often desirable that all cantilevers have nearly identical curvatures or flatness. We demonstrate that using the laser technique, it is possible to adjust curvatures by an amount as small as 3.5 ėrad, for cantilevers with a typical dimension of 110×13×0.6 ėm (length×width×thickness). Different laser parameters can be applied in order to achieve the required curvature adjustment. A two-dimensional finite element model of laser curvature adjustment is presented which enables the prediction of the laser processing parameters (18 refs.)
Inspec No.: 8247160

   
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