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7 P-assisted growth of molecular wires on Si(001)-2×1
Author(s): Yun Wang, G.S. Hwang (Affiliation: Dept. of Chem. Eng., Univ. of Texas, Austin, TX, USA)
Journal: Appl. Phys. Lett. (USA), vol.86, no.2, p.23108-1-3 (10 Jan. 2005)
Publisher: AIP, USA
Language: English
ISSN: 0003-6951, Full text
Document type: Journal article
Abstract: Using first principles quantum mechanics (DFT/GGA with pseudopotentials) calculations, we propose a mechanism for the P-assisted auto-catalyzed chain reaction of alkene molecules on a monohydride Si(001)-2×1-H surface. This study shows that surface-incorporated P atoms can serve as an initiator and a terminator for the self-directed growth of onedimensional molecular wires on Si(001). We first present reaction paths and energetics for creation of single Si dangling bonds by (P-associated) selective H2 desorption on the Pincorporated Si(001)-H surface, with comparison to associative H2 desorption on the clean Si(001)-H surface. The (Si-dangling bond mediated) growth of styrene molecular lines is then compared between the P-incorporated and clean Si (001) surfaces (18 refs.)
Inspec No.: 8247215
8 Nanoscale FD/SOI CMOS: thick or thin BOX?
Author(s): V.P. Trivedi, J.G. Fossum (Affiliation: Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA)
Journal: IEEE Electron Device Lett. (USA), vol.26, no.1, p.26-8 (Jan. 2005)
Publisher: IEEE, USA
Language: English
ISSN: 0741-3106, Full text
Document type: Journal article
Abstract: The question of buried-oxide (BOX) thickness scaling for nanoscale fully depleted (FD) silicon-on-insulator (SOI) CMOS is addressed via insightful quantitative and qualitative analyses. Whereas, FD/SOI MOSFETs with thin BOX give better control of short-channel effects (SCEs), they complicate the material and/or process technologies and undermine CMOS speed. We show that the improved SCE control afforded by thin BOX is due to high transverse electric field in the body defined by the device asymmetry, and not only to the suppression of electric-field fringing in the BOX as is commonly presumed. Since conventional FD/SOI CMOS with thick BOX can be scaled via ultrathin bodies, we conclude that thin BOX is not needed nor desirable (20 refs.)
Inspec No.: 8250021
9 ESD-hardened device fuels UHF amplifiers
Author(s): J. Huber (Affiliation: Infineon Technol. AG, Munich,Germany), G. Wevers Journal: Microw. RF (USA), vol.43, no.7, p.57-64 (July 2004)
Publisher: Penton Publishing, USA
Language: English
ISSN: 0745-2993
Document type: Journal article
Abstract: In this paper, a rugged bipolar transistor has been designed to withstand high levels of ESD making it well suited for UHF automotive electronics applications. The BFP460 from Infineon Technologies is a general-purpose transistor that is electrostatic-discharge (ESD)-hardened for such applications. It benefits from a silicon-bipolar process technology with 23-GHz transition frequency and can safely withstand ESD pulses of 1500 W between any pair of terminals. The effectiveness of this device is demonstrated in a UHF low-noise amplifier (LNA) that is ideal for automotive use (5 refs.)
Inspec No.: 8248301
10 Voltage holding characteristics of polymer stabilized nematic liquid crystal cell doped by UV curable liquid crystaline monomer
Author(s): M. Nanaum, T. Takahashi, S. Saito Journal: Res. Rep. Kogakuin Univ. (Japan), no.96, p.85-8 (Oct. 2004)
Publisher: Kogakuin Univ, Japan
Language: Japanese
ISSN: 0368-5098
Document type: Journal article
Abstract: Further improvements in characteristics such as transient responses and viewing angle properties are expected for liquid crystal displays (LCDs). The polymer stabilization method has attracted attention as a potential method to improve the transient response characteristics of nematic liquid crystal cells. However, recent experiments have shown that polymer stabilization treatment results in a degradation of the voltage holding ratio (VHR) of nematic liquid crystal cells. It has been clarified that such degradation of VHR is caused by the existence of residual ionic monomers even after UV irradiation in the polymer stabilization method. In this paper, we experimented with the UV irradiation conditions in an effort to reduce residual ionic monomers. In particular, the effects of AC or DC voltage application during the UV irradiation and the irradiation intensity of UV light on the residual ionic monomers have been experimentally investigated. In our experiments, we used the nematic LC ZLI-4792 (Merck) doped by 3 wt% of the monomer RMM 34 (Merck), in which a polymerization initiator is included. The VHR was measured using the VHR measurement system VHR-1A (Toyo Tech.). It was confirmed that the application of AC voltage during the UV irradiation process is effective for the improvement of the VHR. Furthermore, it was been shown that an intensity of UV irradiation higher than 10 [mW/cm2] results in a degradation of VHR, rather than an improvement (11 refs.)
Inspec No.: 8248367
11 Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer
Author(s): F. Qiao, X.F. Huang, J. Li, W. Li, H.C. Zou, X.F. Li,K.J. Chen (Affiliation: Nat. Laboratory of Solid State Microstructures, Nanjing Univ., China)
Journal: Superlattices Microstruct. (UK), vol.35, no.1-2, p.19-24 (Jan.-Feb. 2004)
Publisher: Academic Press, UK
Language: English
ISSN: 0749-6036, Full text
Document type: Journal article
Abstract: We employ the method of laser interference crystallization carried out by using a phase-shifting grating mask (PSGM) to fabricate nanocrystal Si with a twodimensional (2D) patterned distribution within a 10 nm thick a-Si:H single layer grown on a SiO2/Si or fused quartz substrate by the plasma-enhanced chemical vapor deposition technique. The results of atomic force microscopy, cross-section transmission electron microscopy and high resolution transmission electron microscopy show that Si nanocrystallites are formed and selectively located in the discal regions within the initial a-Si:H layer, which are patterned with the same 2D periodicity of 2.0 ėm as the PSGM. The diameter of each discal region is about 250 nm and the height is about the same as the thickness of a-Si:H layers. These results demonstrate that the present method is promising for the fabrication of various patterned nc-Si arrays for device applications simply by changing the geometry of the mask (8 refs.)
Inspec No.: 8249773
12 Tiny science thinks big [nanotechnology]
Author(s): E. Fussell
Journal: InTech (USA), vol.51, no.6, p.34-6 (June 2004)
Publisher: ISA, USA
Language: English
ISSN: 0192-303X
Document type: Journal article
Abstract: Sunscreen using nanodispersed zinc oxide, antiwrinkle cream incorporating vitamin A inside a polymer capsule, tennis balls made with clay polymer nanocomposites to increase bounce, and stain-resistant clothing - these are just some of the consumer by-products of nanotechnology. While nanotechnology is burgeoning on the consumer side, it's also making a splash with nanomaterials in automotive applications, nanoelectronics and devices, and nanobiomedical applications. The possibilities seem endless, say the technology's proponents. The paper has a brief look at: nanomaterials; nanoelectronics and devices; bio applications; manufacturing sector; and nanostandards.
Inspec No.: 8251319
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