HTE Labs - 42 Compact modeling of environmentally induced radiation effects on electrical devices 43 Low temperature Si-to-Si wafer bonding with solgel coating as intermediate layer 44 Can nanoindentation help to determine the local mechanical properties of microelectronic materials? a state-of-the-art review 45 Self-recovery experiments in extreme environments using a field programmable transistor array

42 Compact modeling of environmentally induced radiation effects on electrical devices Author(s): X. Huang, A.M. Francis, A.B. Lostetter, H.A. Mantooth (Affiliation: Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2597-607 Vol.4 Document type: Conference paper Abstract: This paper presents the feasibility of formalizing a compact modeling methodology for environmentally induced radiation effects, and of implementing that methodology into the Paragon compact modeling tool. For demonstration purposes, the paper focuses on two specific radiation effects implemented in a MOSFET device model. These two effects were chosen in order to illustrate two differing forms of model development. The first form takes existing device models and modifies the equations and/or variables already existing within that model to achieve the required results (behavioral modification). The second form adds completely new equations and variables to existing device models (behavioral augmentation). The MOSFET (1) threshold voltage shift due to total ionizing dosage (TID) and (2) leakage current increase due to TID, are two major device effects that fulfill both of these requirements. Voltage shift and leakage current are critical design issues in rad-hard electronics and space environments. The threshold voltage shift effects are implemented through the modification of device model equations, while leakage current increases are implemented with added behavioral macros to the model topology, thus fulfilling the second requirement. The use of the modified compact MOSFET model is illustrated in the simulation of an op-amp based filter. Gain and frequency shifts can be observed and compared as the circuit absorbs differing amounts of TID (50 refs.) Inspec No.: 8255616 43 Low temperature Si-to-Si wafer bonding with solgel coating as intermediate layer Author(s): J. Wei, S.S. Deng, C.M. Tan, C.K. Wong (Affiliation: Singapore Inst. of Manuf. Technol., Singapore) Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004) (IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 189-92 Document type: Conference paper Abstract: In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating (21 refs.) Inspec No.: 8256061 44 Can nanoindentation help to determine the local mechanical properties of microelectronic materials? a state-of-the-art review Author(s): H.-J. Albrecht (Affiliation: Siemens AG, Berlin, Germany ), T. Hannach, A. Hase, A. Juritza, K. Muller, W.H. Muller Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004) (IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 462-7 Document type: Conference paper Abstract: In this paper we investigate the mechanical properties of intermetallic phases in microelectronic structures with the help of nanoindentation. Moreover, we shall try to answer the question as to whether nanoindentation can be used to quantify the growth of intermetallic phases, at least at the interface of a solder connection. Different specimens and treatments (such as reflow processes and subsequent aging) have been analyzed. The results of these experiments serve as reference values for FE-simulations which are also discussed (14 refs.) Inspec No.: 8256068 45 Self-recovery experiments in extreme environments using a field programmable transistor array Author(s): A. Stoica, D. Keymeulen (Affiliation: Jet Propulsion Lab., Pasadena, CA, USA), T. Arslan, Vu Duong, R. Zebulum, I. Ferguson, Xin Guo Editor(s): O.Diessel, J.Williams Conference: Proceedings. 2004 IEEE International Conference on Field- Programmable Technology, Brisbane, NSW, Australia Conference Date: 6-8 Dec. 2004 Publication: Proceedings. 2004 IEEE International Conference on Field-Programmable Technology (IEEE Cat. No.04EX921) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8651 5 Page: 9-15 Document type: Conference paper Abstract: Temperature and radiation tolerant electronics, as well as long life survivability are key capabilities required for future NASA missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. However, current technology can only ensure very limited lifetime in extreme environments. This paper describes novel experiments that allow adaptive in-situ circuit redesign/reconfiguration during operation in extreme temperature and radiation environments. This technology would complement material/device advancements and increase the mission capability to survive harsh environments. The approach is demonstrated on a mixed-signal programmable chip (FPTA-2), which recovers functionality for temperatures until 28°C and with total radiation dose up to 250kRad (8 refs.) Inspec No.: 8256078

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42 Compact modeling of environmentally induced radiation effects on electrical devices Author(s): X. Huang, A.M. Francis, A.B. Lostetter, H.A. Mantooth (Affiliation: Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR, USA) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2597-607 Vol.4 Document type: Conference paper Abstract: This paper presents the feasibility of formalizing a compact modeling methodology for environmentally induced radiation effects, and of implementing that methodology into the Paragon compact modeling tool. For demonstration purposes, the paper focuses on two specific radiation effects implemented in a MOSFET device model. These two effects were chosen in order to illustrate two differing forms of model development. The first form takes existing device models and modifies the equations and/or variables already existing within that model to achieve the required results (behavioral modification). The second form adds completely new equations and variables to existing device models (behavioral augmentation). The MOSFET (1) threshold voltage shift due to total ionizing dosage (TID) and (2) leakage current increase due to TID, are two major device effects that fulfill both of these requirements. Voltage shift and leakage current are critical design issues in rad-hard electronics and space environments. The threshold voltage shift effects are implemented through the modification of device model equations, while leakage current increases are implemented with added behavioral macros to the model topology, thus fulfilling the second requirement. The use of the modified compact MOSFET model is illustrated in the simulation of an op-amp based filter. Gain and frequency shifts can be observed and compared as the circuit absorbs differing amounts of TID (50 refs.) Inspec No.: 8255616	43 Low temperature Si-to-Si wafer bonding with solgel coating as intermediate layer Author(s): J. Wei, S.S. Deng, C.M. Tan, C.K. Wong (Affiliation: Singapore Inst. of Manuf. Technol., Singapore) Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004) (IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 189-92 Document type: Conference paper Abstract: In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating (21 refs.) Inspec No.: 8256061
44 Can nanoindentation help to determine the local mechanical properties of microelectronic materials? a state-of-the-art review Author(s): H.-J. Albrecht (Affiliation: Siemens AG, Berlin, Germany ), T. Hannach, A. Hase, A. Juritza, K. Muller, W.H. Muller Editor(s): K.C.Toh, Y.C.Mui, J.How, J.H.L.Pang Conference: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004), Singapore Conference Date: 8-10 Dec. 2004 Publication: Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004) (IEEE Cat. No.04EX971) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8821 6 Page: 462-7 Document type: Conference paper Abstract: In this paper we investigate the mechanical properties of intermetallic phases in microelectronic structures with the help of nanoindentation. Moreover, we shall try to answer the question as to whether nanoindentation can be used to quantify the growth of intermetallic phases, at least at the interface of a solder connection. Different specimens and treatments (such as reflow processes and subsequent aging) have been analyzed. The results of these experiments serve as reference values for FE-simulations which are also discussed (14 refs.) Inspec No.: 8256068	45 Self-recovery experiments in extreme environments using a field programmable transistor array Author(s): A. Stoica, D. Keymeulen (Affiliation: Jet Propulsion Lab., Pasadena, CA, USA), T. Arslan, Vu Duong, R. Zebulum, I. Ferguson, Xin Guo Editor(s): O.Diessel, J.Williams Conference: Proceedings. 2004 IEEE International Conference on Field- Programmable Technology, Brisbane, NSW, Australia Conference Date: 6-8 Dec. 2004 Publication: Proceedings. 2004 IEEE International Conference on Field-Programmable Technology (IEEE Cat. No.04EX921) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8651 5 Page: 9-15 Document type: Conference paper Abstract: Temperature and radiation tolerant electronics, as well as long life survivability are key capabilities required for future NASA missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. However, current technology can only ensure very limited lifetime in extreme environments. This paper describes novel experiments that allow adaptive in-situ circuit redesign/reconfiguration during operation in extreme temperature and radiation environments. This technology would complement material/device advancements and increase the mission capability to survive harsh environments. The approach is demonstrated on a mixed-signal programmable chip (FPTA-2), which recovers functionality for temperatures until 28°C and with total radiation dose up to 250kRad (8 refs.) Inspec No.: 8256078

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