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38 Comparison of existing & proposed SOI MOSFET device structures for minimizing total dose radiation damage
Author(s): S. Parke (Affiliation: Boise State Univ., ID, USA )
Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA
Conference Date: 6-13 March 2004
Sponsor(s): Aerosp. and Electron. Syst. Soc
Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)
Publisher: IEEE, USA, 2004
Language: English
ISBN: 0 7803 8155 6 Page: 2427-30 Vol.4
Document type: Conference paper
Abstract: This paper compares various SOI MOSFET device structures with regard to their ability to mitigate total ionizing dose (TID) radiation effects. Three-dimensional rad-hardening of the dielectrics surrounding the channel and/or direct control of the channel surfaces is required, in order to reduce source to drain leakage caused by radiation-induced charges which accumulate at the dielectric interfaces surrounding the device. In addition, it is highly desirable to provide dynamic adjustment of the device's electrical characteristics in order to compensate for these TID effects as well as other wearout effects. A new, ultra-low-power SOI RF-CMOS technology from American Semiconductor that is able to operate reliably in high radiation environments is also be described. This double-gated 0.18 ìm technology permits dynamically "selfrepairing" circuits, which are tolerant of large lifetime total doses of radiation. This technology also features MOSFETs and lateral BJT's with undoped channel/base regions that are appropriate for cryogenic operation (6 refs.)
Inspec No.: 8255601
39 High temperature experiments using programmable transistor array
Author(s): R.S. Zebulum, Xin Guo, D. Keymeulen, M.I. Ferguson, Vu Duong, A. Stoica (Affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA)
Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA
Conference Date: 6-13 March 2004
Sponsor(s): Aerosp. and Electron. Syst. Soc
Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)
Publisher: IEEE, USA, 2004
Language: English
ISBN: 0 7803 8155 6 Page: 2437-48 Vol.4
Document type: Conference paper
Abstract: Temperature and radiation tolerant electronics, as well as long life survivability are the key capabilities required for future NASA missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. Compensation techniques such as bias cancellation circuitry have also been employed. However, current technology can only ensure very limited lifetime in extreme environments. This paper presents a novel approach, based on evolvable hardware technology, which allows adaptive in-situ circuit redesign/reconfiguration during operation in extreme environments. This technology complements material/device advancements and increases the mission capability to survive harsh environments. The approach is demonstrated on a mixed-signal programmable chip, which recovers functionality until 280°C. We show in this paper the functionality recovery at high temperatures for a variety of circuits, including rectifiers, amplifiers and filters (9 refs.)
Inspec No.: 8255602
40 Evolutionary recovery from radiation induced faults on reconfigurable devices
Author(s): A. Stoica (Affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA), T. Arslan, D. Keymeulen, Vu Duong, R. Zebulum, I. Ferguson, T. Daud
Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA
Conference Date: 6-13 March 2004
Sponsor(s): Aerosp. and Electron. Syst. Soc
Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)
Publisher: IEEE, USA, 2004
Language: English
ISBN: 0 7803 8155 6 Page: 2449-57 Vol.4
Document type: Conference paper
Abstract: Radiation hard technologies for electronics are the conventional approach for survivability in high radiation environments. This paper presents a novel approach based on evolvable hardware. The key idea is to reconfigure a programmable device, in-situ, to compensate, or bypass its degraded or damaged components. The paper demonstrates the approach using a JPL-developed reconfigurable device, a field programmable transistor array (FPTA), which shows recovery from radiation damage when reconfigured under the control of evolutionary algorithms. Experiments with total radiation dose up to 350 kRad show that while the functionality of a variety of circuits, including a rectifier and a digital to analog converter implemented on an FPTA-2 chip is degraded/lost at levels before 100 kRad, the correct functionality can be recovered through the proposed evolutionary approach. The evolutionary algorithm controls the state of about 1,500 switches that determine configurations on the FTPA-2 programmable device. Evolution is able to use the resources of the reconfigurable cells, even radiation damaged components, to synthesize a new solution (21 refs.)
Inspec No.: 8255603
41 Extreme temperature electronics
Author(s): L.P. Sadwick, R.J. Hwu, J.H. Chern (Affiliation: InnoSys Inc., Salt Lake City, UT, USA)
Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA
Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc
Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720)
Publisher: IEEE, USA, 2004
Language: English
ISBN: 0 7803 8155 6 Page: 2528-37 Vol.4
Document type: Conference paper
Abstract: In this paper a new class of electronic devices, called solid state vacuum devices (SSVDs), is presented and discussed with the primary focus aimed toward extreme environment applications. SSVDs, due to their intrinsic high temperature operation and radiation hardness, should be extremely well suited for extreme environments that exist both on Earth and, for example, on the planet Venus. SSVDs combine features inherent to solid state and vacuum electronics in this new class of devices. SSVDs can be used as high voltage/high power devices (from DC to well into the GHz range) or as SSI or MSI integrated circuits. SSVDs can be made in many different sizes and shapes to suit the application. SSVDs can be compact and lightweight. SSVDs are, by their very nature, high temperature electronics. Device parameters (e.g., gain, gm, output resistance, etc.) are design parameters that can be chosen to match the application. The power handling capability of SSVDs can range from less than milliwatts to easily more than tens of kilowatts. SSVD operation, parameters and performance results and information can be the focus of this presentation with the primary area of concentration on extreme environment high temperature applications (6 refs.)
Inspec No.: 8255609
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