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19 Switching oxide traps
Author(s): T.R. Oldham (Affiliation: NASA Goddard Space Flight Center, Greenbelt, MD, USA)
Journal: Int. J. High Speed Comput. (Singapore), vol.14, no.2, p.581-603 (June 2004)
Publisher: World Scientific, Singapore
Language: English
ISSN: 0129-0533
Document type: Journal article
Abstract: Positive oxide trapped charge is one of the main factors determining the radiation response of a CMOS device. The most widely accepted model for oxide-trapped charge is the dipole model, originally proposed by Lelis et al. (1994). The annealing of radiation-induced positive trapped charge proceeds (usually) via the tunneling of electrons, which form metastable dipoles, compensating the trapped positive charge without removing it. Under appropriate bias, these compensating electrons can tunnel back to the Si substrate, restoring the trapped positive charge. The experimental work leading to the development of this model is summarized. By now there is a large body of experimental and theoretical work by others, confirming and extending the original model. In particular, the relevance of the model to some electron trapping studies has been shown, and its application to the larger topic of oxide reliability is discussed (63 refs.)
Inspec No.: 8252004
20 Size controlling of the nanoscale silicon particles in a-Si:H films by RTA
Author(s): Xue Qing, Li Guan-cheng, Wang Bing-kun (Affiliation: Dept. of Math. Phys. Sci., Huaihai Inst. of Technol., Lianyungang, China)
Journal: Semicond. Technol. (China), vol.29, no.10, p.20-6 (2004)
Publisher: Editorial Board of Semicond. Technol, China
Language: Chinese
ISSN: 1003-353X
Document type: Journal article
Abstract: A new method for controlling the size of nanoscale silicon grown by rapid thermal annealing (RTA) on hydrogenated amorphous silicon(a-Si:H) films is reported. The effect of the temperature on the formed silicon particles is discussed (2 refs.)
Inspec No.: 8252021
21 A review of atomic force microscopy imaging systems: application to molecular metrology and biological sciences
Author(s): N. Jalili, K. Laxminarayana (Affiliation: Dept. of Mech. Eng., Clemson Univ., SC, USA)
Journal: Mechatronics (UK), vol.14, no.8, p.907-45 (Oct. 2004)
Publisher: Elsevier, UK
Language: English
ISSN: 0957-4158, Full text
Document type: Journal article
Abstract: The atomic force microscope (AFM) system has evolved into a useful tool for direct measurements of microstructural parameters and unraveling the intermolecular forces at nanoscale level with atomic-resolution characterization. Recent research on AFM systems has focused on many manufacturing and metrology processes at molecular levels due to its tremendous surface microscopic capabilities. This paper provides a review of such recent developments in AFM imaging system with emphasis on operational modes, microcantilever dynamic modeling and control. Due to the important contributions of AFM systems to metrology and biological sciences, this study also provides a comprehensive review of recent applications of different AFM systems in these two important areas (124 refs.)
Inspec No.: 8252036
22 Organic nano-transistors wired by oriented charge transfer complex crystal
Author(s): M. Sakai, E. Yajima, H. Sakuma, M. Iizuka, M. Nakamura, K. Kudo (Affiliation: Dept. of Electron. & Mech. Eng., Chiba Univ., Japan)
Journal: Trans. Inst. Electr. Eng. Jpn. C (Japan), vol.124-C, no.6, p.1224-8 (June 2004)
Publisher: Inst. Electr. Eng. Japan, Japan
Language: Japanese
ISSN: 0385-4221, Full text
Document type: Journal article
Abstract: We have fabricated high conducting organic wires and self-wired nano-transistors of tetrathiafulvalene (TTF) and tetracyanoquinodimethane (TCNQ) charge transfer complex using co-evaporation method with an electric field. The conducting wires which directly bridge two gold electrodes indicated high-conductive ohmic contact with the gold electrode. Self-wired organic field effect transistor was formed at the connecting point of conductive wires. Field effect transistor characteristics of nano-transistor exhibited nchannel behavior with on/off ratio of 110. The length of active layer was estimated to be approximately a few nanometers (13 refs.)
Inspec No.: 8253215
23 Conference on Photo-responsive Materials
Conference: Conference on Photo-responsive Materials, Eastern Cape, South Africa Conference Date: 25-29 Feb. 2004 Sponsor(s): EMF Ltd. (UK); Sensors Unlimited Inc. (USA); Carl Zeiss (Pty) Ltd
Document type: Conference proceedings in journal
Abstract: The following topics are dealt with: the future of ZnO light emitters; irradiation induced defects in ZnO studied by positron annihilation spectroscopy; optical second harmonic imaging of zinc oxide thin films grown by metalorganic chemical vapour deposition (MOCVD); photoluminescence spectroscopy of electron irradiation induced defects in cubic boron nitride (cBN); characterization and performance of nanocrystalline materials for thin film electronic and photovoltaic applications; electrical properties of ion bombarded AlGaN Schottky photodetectors; structural and optical properties of homogeneous monophasic thin films; degradation of pulsed lased deposited thin films phosphor
Inspec No.: 8251463
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