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24 Diamond vacuum field emission devices
Author(s): W.P. Kang, J.L. Davidson, A. Wisitsora-at, Y.M. Wong, R. Takalkar, K. Holmes (Affiliation: Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA), D.V. Kerns
Conference: Ninth International Conference on New Diamond Science and Technology, Tokyo, Japan Conference Date: 26- 29 March 2004
Journal: Diam. Relat. Mater. (Netherlands), vol.13, no.11-12, p.1944-8 (Nov.-Dec. 2004)
Publisher: Elsevier, Netherlands
Language: English
ISSN: 0925-9635
Document type: Conference paper in journal
Abstract: This article reports the development of (a) vertical and (b) lateral diamond vacuum field emission devices with excellent field emission characteristics. These diamond field emission devices, diode and triode, were fabricated using a self-aligning gate formation technique from silicon-on-insulator wafers using conventional silicon micropatterning and etching techniques. High emission current >0.1 A was achieved from the vertical diamond field emission diode with an indented anode design. The gated diamond triode in vertical configuration displayed excellent transistor characteristics with high DC gain of ~800 and large AC output voltage of ~100 V p-p. Lateral diamond field emission diodes with cathodeanode spacing less than 2 ìm were fabricated. The lateral diamond emitter exhibited a low turn-on voltage of ~5 V and a high emission current of 6 ìA. The low turn-on voltage (field ~3 V/ìm) and high emission characteristics are the best of reported lateral field emitter structures (12 refs.)
Inspec No.: 8249691
25 Blue emitting self-assembled nano-fibers of parasexiphenyl grown by hot wall epitaxy
Author(s): A. Andreev (Affiliation: Inst. for Semicond. & Solid State Phys., Linz Univ., Austria), F. Quochi, A. Kadashchuk, H. Sitter, C. Winder, H. Hoppe, S. Sariciftci, A. Mura, G. Bongiovanni
Conference: Conference on Photo-responsive Materials, Eastern Cape, South Africa
Conference Date: 25-29 Feb. 2004
Sponsor(s): EMF Ltd. (UK); Sensors Unlimited Inc. (USA); Carl Zeiss (Pty) Ltd Journal: Phys. Status Solidi C (Germany), no.9, p.2288-93 (2004)
Publisher: Wiley-VCH, Germany
Language: English
ISSN: 1610-1634, Full text
Document type: Conference paper in journal
Abstract: In this work, we report about photoluminescence investigations and the first observation of lasing in highlyordered, crystalline para-sexiphenyl (PSP) films grown by hot wall epitaxy on mica substrates. We also demonstrate the fabrication of hot wall epitaxially grown PSP layers for blue light emitting diodes. The electroluminescence (EL) shows two peaks at 425 and 450 nm, which coincide with the corresponding photoluminescence spectra. The electric field required for the onset of the EL in our single layer devices is comparable with that for optimized multilayer devices based on PSP (13 refs.)
Inspec No.: 8251471
26 Recombination and radiation damage in crystalline silicon solar cell material
Author(s): A.R. Peaker, V.P. Markevich (Affiliation: Inst. of Sci. & Technol., Manchester Univ., UK), L. Dobaczewski
Conference: Conference on Photo-responsive Materials, Eastern Cape, South Africa
Conference Date: 25-29 Feb. 2004
Sponsor(s): EMF Ltd. (UK); Sensors Unlimited Inc. (USA); Carl Zeiss (Pty) Ltd
Journal: Phys. Status Solidi C (Germany), no.9, p.2274-81 (2004)
Publisher: Wiley-VCH, Germany
Language: English
ISSN: 1610-1634, Full text
Document type: Conference paper in journal
Abstract: This article reviews the carrier recombination mechanisms which degrade crystalline solar cells as a result of exposure to light (photo-degradation) and in the case of satellite cells after exposure to energetic electrons in space. The role of impurities is considered, in particular, contamination with iron and the formation of metastable boron-oxygen complexes. The application of high resolution (Laplace) deep level transient spectroscopy in the structural identification of the induced defects is discussed with a view to controlling their formation by defect engineering (27 refs.)
Inspec No.: 8251474
27 Effects of wavelength and doping concentration on silicon damage threshold
Author(s): Hsiao-hua Liu, G. Mourou (Affiliation: Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA), Y.N. Picard, S.M. Yalisove, T. Juhasz
Editor(s): A.A.Sawchuk
Conference: Conference on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA
Conference Date: 16-21 May 2004
Sponsor(s): APS; IEEE; Opt. Soc. of America
Publication: Conference on Lasers and Electro-Optics (CLEO)
Publisher: IEEE, USA, 2004
Language: English Page: 2 pp. vol.2
Document type: Conference paper
Abstract: Our damage experiment shows threshold fluence does not decrease with increasing doping concentration and its dependence on wavelength is weak, with photon energies above or below bandgap. Our results indicate impact ionization is the dominating mechanism
Inspec No.: 8254847
28 Pulsed light absorption induced quantum well intermixing on InGaAsP/InGaAsP MQW using 532 nm irradiation
Author(s): S.H. Cho, R.J. Ram (Affiliation: Dept. of Electr. Eng. & Compiler Sci., MIT, Cambridge, MA, USA), D.S. Byun, R.L. Thom
Editor(s): A.A.Sawchuk
Conference: Conference on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA
Conference Date: 16-21 May 2004
Sponsor(s): APS; IEEE; Opt. Soc. of America
Publication: Conference on Lasers and Electro-Optics (CLEO)
Publisher: IEEE, USA, 2004
Language: English Page: 2 pp. vol.2
Document type: Conference paper
Abstract: Pulsed light absorption at 532 nm induces andachieves 45 nm blue-shifts of the bandgap but no shift at 1064nm, when the maximal fluence is 125 mJ/cm2 (4 refs.)
Inspec No.: 8254861
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