HTE Labs - 29 Self-assembled DNA molecules conjugated to GaN semiconductor nanostructures for radiative decay engineering 30 Commercially fabricated radiation hardened 4Mbit SRAM 31 High performance radiation hardened static random access memory (SRAM) design for space applications 32 Nonvolatile and SDRAM ferroelectric memories for aerospace applications 33 Nanotube memories for space applications

29 Self-assembled DNA molecules conjugated to GaN semiconductor nanostructures for radiative decay engineering Author(s): A. Neogi (Affiliation: Dept. of Phys., North Texas Univ., Denton, TX, USA), P.B. Neogi, A. Sarkar, H. Morkoz Editor(s): A.A.Sawchuk Conference: Conference on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA Conference Date: 16-21 May 2004 Sponsor(s): APS; IEEE; Opt. Soc. of America Publication: Conference on Lasers and Electro-Optics (CLEO) Publisher: IEEE, USA, 2004 Language: English Page: 2 pp. vol.2 Document type: Conference paper Abstract: This study aims to develop a highly luminescent biomaterial system that can be conjugated to weakly fluorescing biological molecules for the development of biosensors. The surface and interface properties of a hybrid semiconductor-metal-organic layered structures that affect the optical properties of the system for developing nanophotonic bioprobes is presented. The proposed strategy is dependent on resonant energy transfer between fluorescently labeled receptors via a metallic interface. The novelty of the approach lies in exploiting the link between bioconjugated DNA nucleosides sensing units with GaN quantum dots using fluorescent radiative decay engineering via resonant surface plasmon interaction (3 refs.) Inspec No.: 8254863 30 Commercially fabricated radiation hardened 4Mbit SRAM Author(s): C. Hafer, D. Slocum, J. Mabra (Affiliation: Aeroflex, Colorado Springs, CO, USA), S. Tyson Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2277-83 Vol.4 Document type: Conference paper Abstract: Survivability of memory integrated circuits is critical to the successful completion of military, civilian, and commercial space applications. Radiation hardened 4 Mbit SRAMs have been developed for these purposes. Aeroflex Colorado Springs, with support from the Air Force Research Laboratory, has developed, tested, and qualified hardened 4Mbit SRAMs in two configurations 512 K×8 and 128 K×32. Unlike other hardened 4Mbit SRAMs, Aeroflex exploits highvolume commercial manufacturing methods to achieve unprecedented low power and electrical performance. Other inherent benefits to using mature high-volume commercial fabrication processes include high yield and reliability at reduced manufacturing costs (10 refs.) Inspec No.: 8255585 31 High performance radiation hardened static random access memory (SRAM) design for space applications Author(s): S. Doyle, S. Ramaswamy, T. Hoang, L. Rockett, T. Grembowski, A. Bumgarner (Affiliation: BAE Syst., Manassas, VA, USA ) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2284-93 Vol.4 Document type: Conference paper Abstract: Static random access memory (SRAM) product for advanced space applications must demonstrate high performance to meet the ever increasing data rates of space systems and must be radiation hardened to ensure unfettered, reliable operation in the harsh environments of outer space. High performance and radiation hardness are not mutually exclusive. The challenge confronting present day SRAM development is to concurrently achieve both of these objectives. An SRAM design evaluation methodology is described that uncovers limitations on performance, facilitating the identification of both the limiting mechanisms and the corrective design enhancements. Simulation model to hardware measurement correlation on two designs of radiation tolerant 4 M SRAM product validates the evaluation methodology. The evaluation methodology described herein can be Universally applied to any SRAM design to ensure that the highest performance potential of the design is realized (2 refs.) Inspec No.: 8255586 32 Nonvolatile and SDRAM ferroelectric memories for aerospace applications Author(s): S.T. Philpy, D.A. Kamp, G.F. Derbenwick (Affiliation: Celis Semicond. Corp., Colorado Springs, CO, USA) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2294-9 Vol.4 Document type: Conference paper Abstract: A hardened-by-design ferroelectric memory cell has been developed for use in memories hardened to total ionizing dose and single event upset applications. This approach allows for wafer fabrication at commercial ferroelectric semiconductor vendors. To prove this design concept, a test chip has been developed and tested under irradiation. The design on the test chip is a prototype 1-kbit nonvolatile ferroelectric memory. The ferroelectric memory capacitor in the memory cell is intrinsically resistant to radiation exposure. The design also has circuitry for immunity to single event upset (SEU) and latch-up. Based on design simulations, it is possible to develop a similar memory to replace high-speed SDRAM. Nonvolatile and DRAM-like behavior of the memory cell can be controlled by using different internal programming voltages. Lower programming voltages are allow SDRAMs to have higher endurance levels in trade for shorter retention times as compared to the nonvolatile ferroelectric memory. This paper presents the approach used for developing hardened-by-design ferroelectric memory, as well as performance and preliminary radiation hardness results (11 refs.) Inspec No.: 8255587 33 Nanotube memories for space applications Author(s): M.N. Lovellette, A.B. Campbell, H.L. Hughes (Affiliation: Naval Res. Lab., Washington, DC, USA), R.K. Lawerence, J.W. Ward, M. Meinhold, T.R. Bengtson, G.F. Carleton, B.M. Segal, T. Rueckes Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2300-5 Vol.4 Document type: Conference paper Abstract: The radiation hardness characteristics of nanoelectromechanical single-walled carbon nanotube (SWNT) memory elements has been studied. The NRAM bits have been exposed to 100 krad, 1 Mrad and 10 Mrad of gammaradiation. Initial test results indicate that NRAM is an extremely radiation hard memory (3 refs.) Inspec No.: 8255588

	Semiconductor Devices - Miscellaneous articles, abstracts, technical notes, letters, publications
HTE Labs

PAPER INFORMATION	PAPER INFORMATION
29 Self-assembled DNA molecules conjugated to GaN semiconductor nanostructures for radiative decay engineering Author(s): A. Neogi (Affiliation: Dept. of Phys., North Texas Univ., Denton, TX, USA), P.B. Neogi, A. Sarkar, H. Morkoz Editor(s): A.A.Sawchuk Conference: Conference on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA Conference Date: 16-21 May 2004 Sponsor(s): APS; IEEE; Opt. Soc. of America Publication: Conference on Lasers and Electro-Optics (CLEO) Publisher: IEEE, USA, 2004 Language: English Page: 2 pp. vol.2 Document type: Conference paper Abstract: This study aims to develop a highly luminescent biomaterial system that can be conjugated to weakly fluorescing biological molecules for the development of biosensors. The surface and interface properties of a hybrid semiconductor-metal-organic layered structures that affect the optical properties of the system for developing nanophotonic bioprobes is presented. The proposed strategy is dependent on resonant energy transfer between fluorescently labeled receptors via a metallic interface. The novelty of the approach lies in exploiting the link between bioconjugated DNA nucleosides sensing units with GaN quantum dots using fluorescent radiative decay engineering via resonant surface plasmon interaction (3 refs.) Inspec No.: 8254863	30 Commercially fabricated radiation hardened 4Mbit SRAM Author(s): C. Hafer, D. Slocum, J. Mabra (Affiliation: Aeroflex, Colorado Springs, CO, USA), S. Tyson Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2277-83 Vol.4 Document type: Conference paper Abstract: Survivability of memory integrated circuits is critical to the successful completion of military, civilian, and commercial space applications. Radiation hardened 4 Mbit SRAMs have been developed for these purposes. Aeroflex Colorado Springs, with support from the Air Force Research Laboratory, has developed, tested, and qualified hardened 4Mbit SRAMs in two configurations 512 K×8 and 128 K×32. Unlike other hardened 4Mbit SRAMs, Aeroflex exploits highvolume commercial manufacturing methods to achieve unprecedented low power and electrical performance. Other inherent benefits to using mature high-volume commercial fabrication processes include high yield and reliability at reduced manufacturing costs (10 refs.) Inspec No.: 8255585
31 High performance radiation hardened static random access memory (SRAM) design for space applications Author(s): S. Doyle, S. Ramaswamy, T. Hoang, L. Rockett, T. Grembowski, A. Bumgarner (Affiliation: BAE Syst., Manassas, VA, USA ) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2284-93 Vol.4 Document type: Conference paper Abstract: Static random access memory (SRAM) product for advanced space applications must demonstrate high performance to meet the ever increasing data rates of space systems and must be radiation hardened to ensure unfettered, reliable operation in the harsh environments of outer space. High performance and radiation hardness are not mutually exclusive. The challenge confronting present day SRAM development is to concurrently achieve both of these objectives. An SRAM design evaluation methodology is described that uncovers limitations on performance, facilitating the identification of both the limiting mechanisms and the corrective design enhancements. Simulation model to hardware measurement correlation on two designs of radiation tolerant 4 M SRAM product validates the evaluation methodology. The evaluation methodology described herein can be Universally applied to any SRAM design to ensure that the highest performance potential of the design is realized (2 refs.) Inspec No.: 8255586	32 Nonvolatile and SDRAM ferroelectric memories for aerospace applications Author(s): S.T. Philpy, D.A. Kamp, G.F. Derbenwick (Affiliation: Celis Semicond. Corp., Colorado Springs, CO, USA) Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2294-9 Vol.4 Document type: Conference paper Abstract: A hardened-by-design ferroelectric memory cell has been developed for use in memories hardened to total ionizing dose and single event upset applications. This approach allows for wafer fabrication at commercial ferroelectric semiconductor vendors. To prove this design concept, a test chip has been developed and tested under irradiation. The design on the test chip is a prototype 1-kbit nonvolatile ferroelectric memory. The ferroelectric memory capacitor in the memory cell is intrinsically resistant to radiation exposure. The design also has circuitry for immunity to single event upset (SEU) and latch-up. Based on design simulations, it is possible to develop a similar memory to replace high-speed SDRAM. Nonvolatile and DRAM-like behavior of the memory cell can be controlled by using different internal programming voltages. Lower programming voltages are allow SDRAMs to have higher endurance levels in trade for shorter retention times as compared to the nonvolatile ferroelectric memory. This paper presents the approach used for developing hardened-by-design ferroelectric memory, as well as performance and preliminary radiation hardness results (11 refs.) Inspec No.: 8255587
33 Nanotube memories for space applications Author(s): M.N. Lovellette, A.B. Campbell, H.L. Hughes (Affiliation: Naval Res. Lab., Washington, DC, USA), R.K. Lawerence, J.W. Ward, M. Meinhold, T.R. Bengtson, G.F. Carleton, B.M. Segal, T. Rueckes Conference: 2004 IEEE Aerospace Conference Proceedings, Big Sky, MT, USA Conference Date: 6-13 March 2004 Sponsor(s): Aerosp. and Electron. Syst. Soc Publication: 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) Publisher: IEEE, USA, 2004 Language: English ISBN: 0 7803 8155 6 Page: 2300-5 Vol.4 Document type: Conference paper Abstract: The radiation hardness characteristics of nanoelectromechanical single-walled carbon nanotube (SWNT) memory elements has been studied. The NRAM bits have been exposed to 100 krad, 1 Mrad and 10 Mrad of gammaradiation. Initial test results indicate that NRAM is an extremely radiation hard memory (3 refs.) Inspec No.: 8255588

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