LOW PRESSURE CHEMICAL VAPOR DEPOSITION LPCVD SILICON NITRIDE DEPOSITION LOW STRESS SILICON NITRIDE DEPOSITION STOICHIOMETRIC SILICON NITRIDE DEPOSITION
HTE Labs

LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 100nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 100nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 200nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 200nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 300nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 300nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 400nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 400nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 500nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 500nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS Stoichiometric, low stress, silicon rich, LPCVD Silicon Nitride standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip.

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Last updated: July 24, 2019

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