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SEM SCANNING ELECTRON MICROSCOPE SERVICES - Hitachi S-4800 Scanning Electron Microscopy (SEM) Imaging and EDX Spectroscopy Materials Analysis Services S-4700, S4500 - services on HTE Labs Wafer Fab
SEM SCANNING ELECTRON MICROSCOPE SERVICES - Hitachi S-4800 Scanning Electron Microscopy (SEM) Imaging and EDX Spectroscopy Materials Analysis Services S-4700, S4500 - services on HTE Labs Wafer Fab - Research and Development Laboratories for semiconductor optoelectonics sensors microwave thin film active and passive components
SEM, SCANNING ELECTRON MICROSCOPE, Hitachi S-4800,Imaging, EDX, Spectroscopy,Materials Analysis Services, S-4700, S4500, Research and Development Laboratories, semiconductor, optoelectonics, sensors, microwave, thin film, active components, passive components,high resolution imaging, Aerospace, Automotive, Biomedical, Biotechnology, Compound Semiconductor, Data Storage, Defense, Thin Film Displays, Thin Film Circuits, Industrial Electronic Products, Lighting, Pharmaceutical, Photonics, Optoelectronics, Polymer Science, Semiconductors, Solar Photovoltaic, Telecommunications
Scanning Electron Microscopes (SEM) are capable of imaging structures and materials with very high resolutions and extreme depth of field.
HTE Labs offers Scanning Electron Microscopy SEM services for following semiconductor related applications: Aerospace, Automotive, Biomedical, Biotechnology, Compound Semiconductor, Data Storage, Defense, Thin Film Displays, Thin Film Circuits, Industrial Electronic Products, Lighting, Pharmaceutical, Photonics and Optoelectronics, Polymer Science, Semiconductors, Solar Photovoltaic, Telecommunications, etc.
HTE Labs employs Hitachi S-4800, Hitachi S4700 or Hitachi S4500 Scanning Electron Microscopes. Here are some of the most important advantages of the Hitachi S-4800 as specified by manufacturer:
1.4nm resolution at 1kV with Beam Deceleration Technology
minimal specimen damage
1.0nm Resolution at 15kV
200mm specimen diameter. This allows HTE Labs to provide Scanning Electron Microscopy SEM imaging services on whole wafers with sizes 1in, 2in, 3in, 4in, 5in,
6in, 8in [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm].
Scanning Electron Microscopy SEM services offered by HTE Labs include:
SEM surface topography of metals, dielectrics, photo resist and other polymers on customer prepared, supplied specimens [cross sections, individual devices or whole wafers]
Thickness measurements and deposition rates calibration of deposited thin film layers by Scanning Electron Microscopy
Structure studies of thin films in nanometer range
Crystallographic information for sub-micron specimen
Measurements of narrow lateral dimensions
Failure analysis, dimensional analysis, process characterization, etc.
SCANNING ELECTRON MICROSCOPE - SEM SERVICES - BEAM TIME
SCANNING ELECTRON MICROSCOPE - SEM - SAMPLES PREPARATION
HTE Labs provides process specialties wafer foundry, thin film vacuum deposition
services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry,
R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers
from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V
bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes.
R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial
process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb),
MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies
and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including
SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy,
SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography,
plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition,
gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2,
silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions
and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages,
packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four
point probe measurements. |
