Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide, silicon nitride, silicon oxynitride un-doped silica glass (USG) , amorphous silicon a:Si, silicon carbide SIC and silicon carbonitride SICN or silicon nitrocarbide SICN thin films. PECVD thin films are especially used to form antireflection coatings in optoelectronic devices, hard masks for chemical etching or plasma etching of silicon, inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride, PECVD Amorphous silicon, PECVD silicon Carbide and PECVD silicon Carbonitride or Nitrocarbide standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride, amorphous silicon, silicon carbide and silicon nitrocarbide processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280° C process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process.